panicked专利名称：DISLOCATION STRESS MEMORIZATION
sharapovaTECHNIQUE (DSMT) ON EPITAXIAL
CHANNEL DEVICES
初三英语复习发明人：Tsung-Hsing Yu,Shih-Syuan Huang,Yi-Ming
Sheu,Ken-Ichi Goto
申请号：US15345814
ugt
how about申请日：20161108
公开号：US20170054022A1
公开日：
20170223
专利内容由知识产权出版社提供
雅思听力807词汇
专利附图：
摘要：The prent disclosure relates to a transistor device having epitaxial source and
2014年广东高考成绩查询drain regions with dislocation stress memorization (DSM) regions that provide stress to a channel region. In some embodiments, the transistor device has an epitaxial source region arranged within a substrate. An epitaxial drain region is arranged within the substrate and is parated from the epitaxial source region by a channel region. A first DSM region, which has a stresd lattice configured to generate stress within the channel region, extends from below the epitaxial source region to a location within the epitaxial source region. A cond DSM region, which has a stresd lattice configured to generate stress within the channel region, extends from below the epitaxial drain region to a location within the epitaxial drain region.
adequate翻译
申请人：Taiwan Semiconductor Manufacturing Co., Ltd.
2017四级答案
federal rerve地址：Hsin-Chu TW
国籍：TW
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