专利名称：Static random access memory (SRAM)
tracking cells and methods of forming the
same
多姿多彩什么意思发明人：Jhon Jhy Liaw
osprey申请号：US15728345
yixi申请日：20171009
公开号：US10163496B2
公开日：
staffing
vulva20181225
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摘要：An embodiment static random access memory (SRAM) array includes a writable SRAM cell dispod in a first row of the SRAM array and an SRAM read current tracking
cnpc
hardworkingcell in the first row of the SRAM array. The SRAM current tracking cell includes a first read pull-down transistor and a first read pass-gate transistor. The first read pull-down transistor includes a first gate electrically connected to a first positive supply voltage line; a first source/drain electrically connected to a first ground line; and a cond source/drain. The first read pass-gate transistor includes a third source/drain electrically connected to the cond source/drain and a fourth source/drain electrically connected to a read tracking bit line (BL). The read tracking BL is electrically connected to a read n amplifier timing control circuit.
申请人：Taiwan Semiconductor Manufacturing Company, Ltd.
checkmate地址：Hsinchu TW
国籍：TW
代理机构：Slater Matsil, LLP
soforth
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