专利名称：INTEGRATED CIRCUITS HAVING
SOURCE/DRAIN STRUCTURE AND METHOD
四级作文题>橄榄的英文OF MAKING
modern发明人：Shih-Hsien HUANG,Yi-Fang PAI,Chien-Chang
SU
申请号：US16933470
大学体验英语申请日：20200720
dula公开号：US20200350432A1
公开日：
samoyed
20201105
专利内容由知识产权出版社提供
专利附图：
合照英文>tamu
摘要：An integrated circuit includes a gate structure over a substrate. The integrated
circuit includes a first silicon-containing material structure in a recess. The first silicon-containing material structure includes a first layer below a top surface of the substrate and in direct contact with the substrate. The first silicon-containing material structure includes a cond layer over the first layer, wherein an entirety of the cond layer is above the top surface of the substrate, a first region of the cond layer clor to the gate structure is thinner than a cond region of the cond layer farther from the gate structure. The first silicon-containing material structure includes a third layer between the first layer and the cond layer, wherein at least a portion of the third layer is below the top surface of the substrate.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.上海新东方英语培训
地址：Hsinchu TW
国籍：TW
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