Generation of periodic structures on SiC upon la

更新时间:2023-05-20 15:53:46 阅读: 评论:0

小学英语教案Generation of periodic structures on SiC upon lar plasma XUV/NIR radiations
谷歌英语翻译器期刊名称: Lar & Particle Beamsmassmutual
reprentation作者: Gemini, L.,Margarone, D.,Trusso, S.,Juha, L.,Limpouch, J.,Mocek, T.,Ossi, P.M.
blockquote年份: 2013年
期号: 第03期
关键词: Generation of periodic structures; Lar plasma irradiation of SiC; LDPE plasma formation by ultra-short pul lar; XUV/NIR dual action
linggle
professor摘要:Surface periodic structures are generated upon irradiation of a silicon carbide (SiC) thin film by the plasma produced by 40 fs puls from a Ti:Sapphire lar focud onto a thick low density polyethylene (LDPE) foil facing the SiC film. Independently of the number of lar puls applied, the structures, with average regular periodicity of 710nm, are evident throughout all irradiated areas. We attribute their formation to the efficient coupling of the unfocud femtocond lar pul with the inco
美剧回归herent extreme ultraviolet component of the lar-generated LDPE plasma.ca study
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