专利名称：SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
发明人：HOSOI TAKASHI全国新高考
望洋兴叹翻译
申请号：JP25155689
感谢信 英文
申请日：19890927
精锐教育一对一收费公开号：JPH03114269A
prisoners公开日：
implement中文
praying
日本留学费用19910515
专利内容由知识产权出版社提供
thank you是什么意思
摘要：PURPOSE:To provide a miconductor device with stable characteristics for high temperature processing by a method wherein, as for the material of an electrode or a wiring, a high melting point metal with boron added thereto or a silicide of the high melting point metal with boron added thereto is ud. CONSTITUTION:5000Angstrom thick WSi0.6B0.1 is deposited on the surface of a GaAs substrate 11 and then a gate electrode 14 in specific shape is formed on an n-type active layer 13 using CF4 plasma. Next, a photoresist 15 is formed and after patterning the resist 15, Si<+> ion in high dosage is implanted using the gate electrode 14 and the photoresist 15 as masks. Next, after removing the photoresist 15, a silicon dioxide film 16 is deposited on the surface of the GaAs substrate 11 so as to be connected at 800 deg.C for 10 minutes. After finishing the annealing process, the silicon dioxide film 16 is removed and then ohmic electrodes 19, 20 are formed and completed respectively on the n<+> regions 17, 18.
星期天英文申请人：HONDA MOTOR CO LTD
更多信息请下载全文后查看
