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阿克萨烈士旅
Photoresists in extreme ultraviolet lithography
(EUVL)
suit什么意思
期刊名称： Advanced Optical Technologies
作者： De Simone, Danilo,Vesters, Yannick,Vandenberghe, Geert会计从业资格证年检
choke年份： 2017年
reply什么意思关键词： CAR;EUV photoresists;MCR;metal-containing resist;metal oxide resist
standard edition
摘要：The evolutionary advances in photonsitive material technology, together with the shortening of the exposure wavelength in the photolithography process, have enabled and driven the transistor scaling dictated by Moores law for the last 50 years. Today, the shortening wavelength trend continues to improve the chips performance over time by feature size miniaturization. The next-generation lithography technology for high-volume manufacturing (HVM) is extreme ultraviolet lithography (EUVL), using a light source with a wavelength of 13.5 nm. Here, we provide a brief introduction to EUVL and p英语四级听力原文
atterning requirements for sub-0-nm feature sizes from a photomaterial standpoint, discussing traditional and novel photoresists. Emphasis will be put on the novel class of metal-containing resists (MCRs) as well as their challenges from
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