Patterning SOI with silicon mask to create box at

更新时间:2023-05-20 03:14:11 阅读: 评论:0

专利名称:Patterning SOI with silicon mask to create
猴子的英文单词
box at different depths
tooth的复数
发明人:Devendra K. Sadana,Dominic J.
Schepis,Michael D. Steigerwalt
申请号:US10923246
brunei申请日:20040820
公开号:US07115463B2
qid公开日:
20061003
nbsi
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专利附图:
摘要:The prent invention provides a method of fabricating a patterned silicon-on-insulator substrate which includes dual depth SOI regions or both SOI and non-SOI
regions within the same substrate. The method of the prent invention includes forming a silicon mask having at least one opening on a surface of Si-containing material, recessing the Si-containing material through the at least one opening using an etching process to provide a structure having at least one recess region and a non-recesd region, and forming a first buried insulating region in the non-recesd region and a cond buried insulating region in the recesd region. In accordance with the prent invention, the first buried insulating region in the non-recesd region is located above the cond buried isolation region in the recesd region. A lift-off step can be employed to remove the first buried insulating region and the material that lies above to provide a substrate containing both SOI and non-SOI regions.skap
申请人:Devendra K. Sadana,Dominic J. Schepis,Michael D. Steigerwalt
地址:Pleasantville NY US,Wappingers Falls NY US,Newburgh NY US
国籍:US,US,USventi
teletransmission
相信的英文
代理机构:Scully, Scott, Murphy & Presr, P.C.
代理人:Robert M. Trepp, Esq.
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