Wafer to Wafer Bonding Process and Structures

更新时间:2023-05-18 22:05:30 阅读: 评论:0

专利名称:Wafer to Wafer Bonding Process and
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发明人:Chen-Hua Yu,Ming-Fa Chen,Wen-Ching Tsai
申请号:US14712729
申请日:20150514初中学历考大专
公开号:US20160190089A1
4级考试公开日:
20160630
专利内容由知识产权出版社提供
专利附图:
摘要:Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a cond substrate, the first surface of the bonded structure
四年级上册英语教案
being an expod surface of the first substrate. A patterned mask having first openings and cond openings is formed on the conductive layer, the first openings and the cond openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of cond bonding connectors are formed in the cond openings. The conductive layer is patterned to form cond portions of the first bonding connectors and cond portions of the cond bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the cond bonding connectors.etie
申请人:Taiwan Semiconductor Manufacturing Company, Ltd.
地址:Hsin-Chu TWdoubted
国籍:TW烟灰
更多信息请下载全文后查看四六级官网准考证打印
豁然开朗的反义词

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