Application 1. The ACS758 outputs an analog signal, V OUT , that varies linearly with the uni- or bi-directional AC or DC primary sampled current, I P , within the range specified. C F is for optimal noi management, with values that depend on the application.
ACS758xCB
Description
The Allegro ® ACS758 family of current nsor ICs provides economical and preci solutions for A C or DC current nsing. Typical applications include motor control, load detection and management, power supply and DC-to-DC converter control, inverter control, and overcurrent fault detection.
The device consists of a precision, low-offt linear Hall circuit with a copper conduction path located near the die. Applied current flowing through this copper conduction path generates a magnetic field which the Hall IC converts into a proportional voltage. Device accuracy is optimized through the clo proximity of the magnetic signal to the Hall transducer. A preci, proportional output voltage is provided by the low-offt, chopper-stabilized BiCMOS Hall IC, which is programmed for accuracy at th
jhce factory.
High level immunity to current conductor dV/dt and stray electric fields, offered by Allegro proprietary integrated shield technology, guarantees low output voltage ripple and low offt drift in high-side, high voltage applications.
The output of the device has a positive slope (>V CC / 2) when an increasing current flows through the primary copper conduction path (from terminal 4 to terminal 5), which is the path ud for current sampling. The internal resistance of this conductive path is 100 μΩ typical, providing low power loss.
The thickness of the copper conductor allows survival of the device at high overcurrent conditions. The terminals of the
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Thermally Enhanced, Fully Integrated, Hall Effect-Bad Linear Current Sensor IC with 100 μΩ Current Conductor
Continued on the next page…
Typical Application
Features and Benefits
▪ Industry-leading noi performance through proprietary amplifier and filter design techniques
▪ Integrated shield greatly reduces capacitive coupling from current conductor to die due to high dV/dt signals, and prevents offt drift in high-side, high voltage applications ▪ Total output error improvement through gain and offt trim over temperature
▪ Small package size, with easy mounting capability ▪ Monolithic Hall IC for high reliability
▪ Ultra-low power loss: 100 μΩ internal conductor resistance ▪ Galvanic isolation allows u in economical, high-side current nsing in high voltage systems ▪ 3.0 to 5.5 V , single supply operation ▪ 120 kHz typical bandwidth
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▪ 3 μs output ri time in respon to step input current ▪ Output voltage proportional to AC or DC currents ▪ Factory-trimmed for accuracy
throughout
▪ Extremely stable output offt voltage ▪ Nearly zero magnetic hysteresis
PSS Leadform PFF Leadform
Package: 5-pin package
Additional leadforms available for qualifying volumes
Selection Guide
Part Number 1
Package
Primary Sampled Current , I P
(A)
Sensitivity Sens (Typ.)(mV/A)
T OP (°C)Packing 2
Terminals Signal Pins ACS758LCB-050B-PFF-T Formed Formed ±5040–40 to 150170 per bulk bag
ACS758LCB-100B-PFF-T Formed Formed ±10020ACS758KCB-150B-PFF-T Formed Formed ±15013.3–40 to 125ACS758KCB-150B-PSS-T Straight Straight ACS758ECB-200B-PFF-T Formed Formed ±200
10
–40 to 85
ACS758ECB-200B-PSS-T
Straight
Straight
1Additional leadform options available for qualified volumes 2Contact Allegro for additional packing options.
conductive path are electrically isolated from the signal leads (pins 1 through 3). This allows the ACS758 family of nsor ICs to be ud in applications requiring electrical isolation without the u of opto-isolators or other costly isolation techniques.
The device is fully calibrated prior to shipment from the factory. The ACS758 family is lead (Pb) free. All leads are plated with 100% matte tin, and there is no Pb inside the package. The heavy gauge leadframe is made of oxygen-free copper.
Description (continued)
Absolute Maximum Ratings
Characteristic
Symbol Notes
Rating Units Forward Supply Voltage V CC 8V Rever Supply Voltage
V RCC –0.5V Working Voltage for Reinforced Isolation V WORKING Voltage applied between pins 1-3 and 4-5; tested at 3000 VAC for 1 minute according to UL standard 60950-1
353VAC Forward Output Voltage V IOUT 28V Rever Output Voltage V RIOUT –0.5V Output Source Current I OUT(Source)VIOUT to GND 3mA Output Sink Current
I OUT(Sink)VCC to VIOUT 1mA Nominal Operating Ambient Temperature T OP Range E –40 to 85ºC Range K –40 to 125ºC Range L
–40 to 150nsor
ºC Maximum Junction T J (max)165ºC Storage Temperature
T stg
–65 to 165
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ºC
Typical Overcurrent Capabilities 1,2
Characteristic
Symbol Notes
Rating Units Overcurrent
I POC
T A = 25°C, 1s duration, 1% duty cycle 1200A T A = 85°C, 1s duration, 1% duty cycle 900A T A = 150°C, 1s duration, 1% duty cycle
600
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A
1Test was done with Allegro evaluation board. The maximum allowed current is limited by T
J (max) only.
2For more overcurrent profiles, plea e FAQ on the Allegro website,
IP+
IP–愠怒
VIOUT GND VCC
Terminal List Table
Number
Name Description
1VCC Device power supply terminal 2GND Signal ground terminal 3VIOUT Analog output signal
4IP+Terminal for current being sampled 5
IP–
Terminal for current being sampled
Functional Block Diagram
Pin-out Diagram
0.1 μF
COMMON OPERATING CHARACTERISTICS1 valid at T
OP
= –40°C to 150°C and V CC = 5 V, unless otherwi specified Characteristic Symbol Test Conditions Min.Typ.Max.Units Supply Voltage V CC3 5.0 5.5V Supply Current I CC Output open–1013.5mA Power-On Delay t POD T A = 25°C–10–μs
Ri Time2t r I P step = 60% of I P+, 10% to 90% ri time, T A = 25°C,
C OUT = 0.47 nF
–3–μs
Propagation Delay Time2t PROP T A = 25°C, C OUT = 0.47 nF –1–μs Respon Time t RESPONSE Measured as sum of t PROP and t r–4–μs Internal Bandwidth3BW i–3 dB; T A = 25°C, C OUT = 0.47 nF–120–kHz Output Load Resistance R LOAD(MIN)VIOUT to GND 4.7––kΩOutput Load Capacitance C LOAD(MAX)VIOUT to GND––10nF Primary Conductor Resistance R PRIMARY T A = 25°C–100–μΩSymmetry2E SYM Over half-scale of Ip99100101% Quiescent Output Voltage4V IOUT(Q)I P = 0 A, T A = 25°C–V CC/2–V Ratiometry2V RAT V CC = 4.5 to 5.5 V–100–% 1Device is f
actory-trimmed at 5 V, for optimal accuracy.
2See Characteristic Definitions ction of this datasheet.
3Calculated using the formula BW i = 0.35 / t r.
4V IOUT(Q) may drift over the lifetime of the device by as much as ±25 mV.
X050 PERFORMANCE CHARACTERISTICS1: T
OP
= –40°C to 150°C, V CC = 5 V, unless otherwi specified
Characteristic Symbol Test Conditions Min.Typ.Max.Units Primary Sampled Current I P–50–50A
Sensitivity
Sens TA Full scale of I P applied for 5 ms, T A = 25°C–40–mV/A Sens (TOP)HT Full scale of I P applied for 5 ms, T OP = 25°C to 150°C–39.4–mV/A Sens (TOP)LT Full scale of I P applied for 5 ms,T OP = –40°C to 25°C–41–mV/A
Noi2V NOISE T A= 25°C, 10 nF on VIOUT pin to GND –10–mV Nonlinearity E LIN Up to full scale of I P , I P applied for 5 ms– 1–1%
Electrical Offt Voltage3
V OE(TA)I P = 0 A, T A = 25°C–±5–mV V OE(TOP)HT I P = 0 A, T OP = 25°C to 150°C–±15–mV V OE(TOP)LT I P = 0 A, T OP = –40°C to 25°C–±35–mV
Magnetic Offt Error I ERROM I P = 0 A, T A = 25°C, after excursion of 50 A–100–mA
Total Output Error4E TOT(HT)Over full scale of I P , I P applied for 5 ms, T OP = 25°C to 150°C––1.2–% E TOT(LT)Over full scale of I P , I P applied for 5 ms, T OP = –40°C to 25°C–2–%
1See Characteristic Performance Data page for parameter distributions over temperature range.
2±3 sigma noi voltage.
2064
3V OE(TOP) drift is referred to ideal V IOUT(Q) = 2.5 V.
4Percentage of I P. Output filtered.
X100 PERFORMANCE CHARACTERISTICS1: T
OP
= –40°C to 150°C, V CC = 5 V, unless otherwi specified
Characteristic Symbol Test Conditions Min.Typ.Max.Units Primary Sampled Current I P–100–100A
Sensitivity
Sens TA Full scale of I P applied for 5 ms, T A = 25°C–20–mV/A Sens (TOP)HT Full scale of I P applied for 5 ms, T OP = 25°C to 150°C–19.75–mV/A Sens (TOP)LT Full scale of I P applied for 5 ms, T OP = –40°C to 25°C–20.5–mV/A
Noi2V NOISE T A= 25°C, 10 nF on VIOUT pin to GND–6–mV Nonlinearity E LIN Up to full scale of I P , I P applied for 5 ms– 1.25– 1.25%
Electrical Offt Voltage3
dollar是什么意思V OE(TA)I P = 0 A, T A = 25°C–±5–mV V OE(TOP)HT I P = 0 A, T OP = 25°C to 150°C–±20–mV V OE(TOP)LT I P = 0 A, T OP = –40°C to 25°C–±20–mV
Magnetic Offt Error I ERROM I P = 0 A, T A = 25°C, after excursion of 100 A–150–mA
Total Output Error4E TOT(HT)Over full scale of I P , I P applied for 5 ms, T OP = 25°C to 150°C––1.3–% E TOT(LT)Over full scale of I P , I P applied for 5 ms, T OP = –40°C to 25°C– 2.4–%
1See Characteristic Performance Data page for parameter distributions over temperature range. 2±3 sigma noi voltage.
3V OE(TOP) drift is referred to ideal V IOUT(Q) = 2.5 V.
4Percentage of I P. Output filtered.
