Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Mangane Oxynitride Films with Excellent Resistance to Copper Diffusion 期刊名称： ACS Applied Electronic Materials
作者： Yong-Ping Wang,Xiaohan Wu,Wen-Jun Liu,David Wei Zhang,Shi-Jin Ding
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关键词： Cu interconnect;Cu diffusion;ultrathin barrier;plasma-enhanced atomic2000亿韩元等于多少人民币
utilizelayer deposition;mangane oxynitride
摘要：Low resistivity, high conformability and ultrathin barriers against Cu diffusion have always been a critical challenge for fabrications of extremely-large-scale integrated circuits. In this article, novel mangane oxynitride (MON) barriers against Cu diffusion are explored by plasma-enhanced atomic layer deposition (PE-ALD) with Mn(EtCp)2 and NH3 precursors, demonstrating a growth rate of ~0.39
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cycle and a root-mean-square (RMS) roughness down to 0.38 nm in the temperature range of 225300 oC. As the deposition temperature increas from
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oval>申请美国大学>教师节英文祝福语简短from the residual oxygen in the chamber. The film resistivity reduces from 3.4×10-2 to 5.5×10-3 Ωcm and the film density ris from
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