专利名称：Field-Effect Transistor
发明人：Johannes Adrianus Maria De Boet
申请号：US17239040
白宫请愿网申请日：20210423
haff公开号：US20210336025A1
公开日：
英文合同范本
谷歌中译英在线翻译20211028
专利内容由知识产权出版社提供
专利附图：
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摘要：Example embodiments relate to field-effect transistors. An example field-effect transistor includes a plurality of field-effect transistor elements, each field-effect transistor element including a gate finger and a gate runner. The gate finger of each field-effect transistor element is electrically connected at a plurality of spaced apart positions to the gate runner of that element. Each gate finger is made of a first material or material composition and has a first electrical resistivity. The field-effect transistor further includes, for each gate finger, a gate resistor through which the electrical connection between the gate finger and the gate runner at a position among the plurality of spaced apart positions is realized. The gate resistor is made of a cond
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护发素怎么用
申请人：Ampleon Netherlands B.V.
地址：Nijmegen NL
国籍：NL
更多信息请下载全文后查看他妈的英文>2016年8月13日
