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Data Sheet No. PD 60259
ADVANCE INFORMATION
IRS2453D(S)PbF
SELF-OSCILLATING FULL-BRIDGE DRIVER IC
Features
Integrated 600V Full-Bridge Gate Driver CT, RT programmable oscillator 15.6V Zener Clamp on VCC Micropower Startup
Logic Level Latched Shutdown Pin
Non-latched shutdown on CT pin (1/6th VCC)
Internal bootstrap FETs
Excellent Latch Immunity on All Inputs & Outputs ESD Protection on All Pins
14-lead SOIC or PDIP package 1.0 uc (typ.) internal deadtime
Description
The IRS2453D is bad on the popular IR2153 lf-oscillating half-bridge gate driver IC, and incorporates a high voltage full-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The output driver features a high pul current buffer stage designed for minimum driver cross-conduction. Noi immunity is achieved with low di/dt peak of the gate drivers, and with a undervoltage lockout hysteresis greater than 1.5V. The
IRS2453D also includes latched and non-latched shutdown pins.
Package
14 Lead PDIP 14 Lead SOIC IRS2453DPbF (Narrow Body) IRS2453DSPbF
IRS2453D PbF Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Parameter Symbol Definition Min.
Max.
Units
V B1, V B2High Side Floating Supply Voltage -0.3 625 V五言四句
V S1, V S2High Side Floating Supply Offt Voltage V B - 25 V B + 0.3 V
V HO1, V HO2High-Side Floating Output Voltage V S - 0.3 V B + 0.3 V
V LO1, V LO2Low-Side Output Voltage -0.3 V CC + 0.3 V
V RT R T Pin Voltage -0.3 V CC + 0.3 V
V CT C T Pin Voltage -0.3 V CC + 0.3 V
V SD SD Pin Voltage -0.3 V CC + 0.3 V
I RT R T Pin Current -5 5 mA
I CC Supply Current (Note 1) --- 25 mA
dV S/dt Allowable Offt Voltage Slew Rate -50 50 V/ns
P D Maximum Power Dissipation @ T A≤ +25ºC, 8-Pin DIP --- 1.0
W
韦玄贞
P D Maximum Power Dissipation @ T A≤ +25ºC, 8-Pin SOIC --- 0.625
W
RθJA Thermal Resistance, Junction to Ambient, 8-Pin DIP --- 125 ºC/W
RθJA Thermal Resistance, Junction to Ambient, 8-Pin SOIC --- 200 ºC/W
T J Junction
Temperature -55 150
T S Storage
无需要太多
Temperature -55 150 ºC
T L Lead Temperature (Soldering, 10 conds) --- 300
Note 1: This IC contains a zener clamp structure between the chip V CC and COM which has a nominal breakdown voltage of 15.6V. Plea note that this supply pin should not be driven by a DC, low
impedance power source greater than the V CLAMP specified in the Electrical Characteristics ction.
IRS2453D PbF Recommended Operating Conditions
For proper operation the device should be ud within the recommended conditions.
Parameter Symbol Definition Min.
Max.色彩风景写生
Units
V BS1, V BS2High Side Floating Supply Voltage V CC - 0.7 V CLAMP V
V S1, V S2Steady State High Side Floating Supply Offt Voltage -3.0 (Note 2) 600 V
V CC Supply
Voltage VCCUV+ V CLAMP V
I CC Supply Current (Note 3) 5 mA
T J Junction
Temperature -25 125
ºC
Note 2:Care should be taken to avoid output switching conditions where the V S node flies inductively below ground by more than 5V.
Note 3:Enough current should be supplied to the V CC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin.
Recommended Component Values
Parameter
Symbol Component Min.
Max.
Units
R T Timing Resistor Value 1--- kΩ
C T C T Pin Capacitor Value 330 --- pF
四的英语单词VBIAS (V CC, V BS) = 14V, VS=0V and T A = 25°C, CLO1=CLO2 = CHO1=CHO2 = 1nF.皱凯
IRS2453D PbF
Electrical Characteristics
V BIAS (V CC, V BS) = 14V, C T = 1 nF and T A = 25°C unless otherwi specified. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO. CLO1=CLO2=CHO1=CHO2=1nF.
Symbol Definition Min
Typ
Max
Units
Test Conditions Low Voltage Supply Characteristics
V CCUV+ Rising
V CC Undervoltage Lockout Threshold 10.0 11.0 12.0
V CCUV- Falling
V CC Undervoltage Lockout Threshold 8.0 9.0 10.0 V
V CCUVHYS V CC Undervoltage Lockout Hysteresis 1.6 2.0 2.4
I QCCUV Micropower Startup V CC Supply Current --- 140 200 µA V CC≤ V CCUV-
I QCC Quiescent VCC Supply Current --- 1.3 2.0 mA
V CLAMP V CC Zener Clamp Voltage 14.6 15.6 16.6 V I CC = 5mA Floating Supply Characteristics
I QBS1UV,
I QBS2UV
Micropower Startup V BS Supply Current --- 3 10 µA V CC≤ V CCUV-,
V CC = V BS
I QBS1,
I QBS2
Quiescent V BS Supply Current --- 60 100 µA
V BS1UV+,
V BS2UV+
V BS Supply Undervoltage Positive Going
Threshold
8.0 9.0 10.0 V
V BS1UV-,
V BS2UV-,
V BS Supply Undervoltage negative Going
Threshold
7.0 8.0 9.0
I LK1, ILK2Offt Supply Leakage Current --- --- 50 µA V B = V S = 600V Oscillator I/O Characteristics
f OSC Oscillator
Frequency 19.6 20.2 20.8 kHz R T = 36.5kΩ
89
95 101 R T = 7.15kΩ
d R T Pin Duty Cycl
e 48 50 52 %
f o < 100kHz
I CT C T Pin Current --- 0.05 1.0 µA
I CTUV UV-Mode
C T Pin Pulldown Current 1 5 --- mA V CC = 7V
V CT+ Upper
C T Ramp Voltage Threshold --- 9.1 ---
V CT- Lower
C T Ramp Voltage Threshold --- 4.8 ---
V V RT+ High-Level
R T Output Voltage, V CC - V RT ---
10
50
mV
I RT = 100µA
-
-- 100
300
mV
I RT = 1mA
V RT- Low-Level
R T Output Voltage --- 10 50 mV I RT = 100µA
--- 100
300
mV
I RT = 1mA
V RTUV UV-Mode
R T Output Voltage --- 0 100 mV V CC≤ V CCUV-
IRS2453D PbF
Electrical Characteristics
V BIAS (V CC, V BS) = 14V, C T = 1 nF and T A = 25°C unless otherwi specified. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO. CLO1=CLO2=CHO1=CHO2=1nF.
Symbol Definition Min
Typ
Max
Units
Test Conditions Gate Driver Output Characteristics
V OH High-Level Output Voltage, V BIAS - V O--- VCC --- I O = 0A V OL Low-Level Output Voltage, V O--- COM --- I O = 0A
V OL_UV UV-Mode Output Voltage, V O--- COM ---
I O = 0A,
V CC≤V CCUV-t r Output Ri Time --- 120 220
t f Output Fall Time --- 50 100
t sd Shutdown Propagation Delay --- 275 ---
nc
t d Output Deadtime (HO or LO) 0.75 1.0 1.50 µc
IO+ Output source current --- 180 ---
IO- Output sink current --- 260 ---
mA
Shutdown
V SD Shutdown Threshold at SD pin (latched) --- 2.0 --- V
V CTSD C T Voltage Shutdown Threshold (non latched) --- 2.3 --- V
V RTSD SD-Mode
R T Output Voltage, V CC - V RT
--- 10 50
mV I RT = 100µA,
V CT = 0V
--- 100 300
mV I RT = 1mA,
V CT = 0V Bootstrap FET Characteristics
VB1_ON
VB2_ON
VB when the bootstrap FET is on
--- 13.7 ---
V
IB1_CAP
IB2_CAP
nba名人堂VB source current when FET is on
30 55 ---
CBS=0.1uF
西装套裙
IB1_10V
IB2_10V
VB source current when FET is on
8 12 ---
mA
VB=10V
