Tailoring channel strain profile by recesd mater

更新时间:2023-05-31 19:16:38 阅读: 评论:0

专利名称:Tailoring channel strain profile by recesd
material composition control
作文开头
发明人:Elisabeth Marley Koontz
申请号:US11021649
烤鸡翅烤箱
申请日:20041222
公开号:US07279406B2
公开日:
20071009
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数字签名专利附图:吉林景点
摘要:The prent invention facilitates miconductor fabrication by providing
methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is lected for the channel regions (). Recesd regions are
formed () in active regions of a miconductor device after formation of gate structures according to the lected strain profile. A recess etch () is employed to remove a surface portion of the active regions thereby forming the recess regions. Subquently, a composition controlled recess structure is formed () within the recesd regions according to the lected strain profile. The recess structure is comprid of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation () to tailor the applied vertical channel strain profile.
申请人:Elisabeth Marley Koontz
地址:Dallas TX US
国籍:US移花接木什么意思
蓝雪花怎么扦插代理人:Peter K. McLarty,W. James Brady, III,Frederick J. Telecky, Jr.
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