升职祝贺词>电话营销专利名称：ETCH RATE MODULATION OF FINFFT THROUGH HIGH-TEMPERATURE ION
IMPLANTATION
发明人：ZHANG, Qintao,PRASAD, Rajesh
申请号：CN2020/110530
核心员工申请日：20200821
公开号：WO2022/036695A1
公开日：
张赫韩国
20220224
专利内容由知识产权出版社提供
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摘要：A method of forming a miconductor device may include forming a plurality of fins extending from a buried oxide layer, wherein a masking layer is dispod atop each of我心飞扬
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the plurality of fins, and performing a high-temperature ion implant to the miconductor device. The method may further include performing an etch process to remove the masking layer from atop each of the plurality of fins, wherein the etch process does not remove the buried oxide layer.
申请人：APPLIED MATERIALS, INC.,LU, Jun-Feng
地址：3050 Bowers Avenue Santa Clara, California 95054,c/o Applied Materials, Inc. 35 Dory Road Gloucester, Massachutts 01930
国籍：US,US
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