HIGH CAPACITANCE DENSITY VERTICAL NATURAL CAPACITO

更新时间:2023-05-22 01:29:23 阅读: 评论:0

专利名称:HIGH CAPACITANCE DENSITY VERTICAL青海海西
NATURAL CAPACITORS钢琴怎么自学
发明人:Anil K. Chinthakindi乡镇环保工作总结
申请号:US11422457
导致用英语怎么说>would申请日:20060606
公开号:US20070279835A1
公开日:
处理器性能排行20071206
专利内容由知识产权出版社提供
竹子的作文
专利附图:
摘要:Disclod are embodiments of a capacitor with inter-digitated vertical plates and a method of forming the capacitor such that the effective gap distance between
plates is reduced. This gap width reduction significantly increas the capacitance density
of the capacitor. Gap width reduction is accomplished during back end of the line processing by masking connecting points with nodes, by etching the dielectric material from between the vertical plates and by etching a sacrificial material from below the vertical plates. Etching of the dielectric material from between the plates forms air gaps and various techniques can be ud to cau the plates to collap in on the air gaps, once the sacrificial material is removed. Any remaining air gaps can be filled by depositing a cond dielectric material (e.g., a high k dielectric), which will further increa the capacitance density and will encapsulate the capacitor in order to make the reduced distance between the vertical plates permanent.
粉丝扇贝蒜蓉的做法
申请人:Anil K. Chinthakindi
地址:Wappingers Falls NY US
国籍:US
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