专利名称：SCALABLE VERTICAL TRANSISTOR BOTTOM
电梯管理制度SOURCE-DRAIN EPITAXY
查流量发明人：Chun-Chen Yeh,Ruilong Xie,Alexander
Reznicek
姜维
申请号：US16732642
申请日：20200102
退避三舍的历史典故公开号：US20210210631A1
公开日：
20210708
专利内容由知识产权出版社提供
专利附图：
局域网限速软件摘要：A method of forming a miconductor device includes forming a sacrificial
epitaxial layer upon a substrate, forming a stack of miconductor material layers upon
the sacrificial epitaxial layer, forming fin mandrels for vertical transistors, lectively etching the sacrificial epitaxial layer beneath the fin mandrels, forming source-drain regions beneath the fin mandrels, lectively removing portions of the fin mandrels creating the fins, and forming source-drain contacts electrically connected to the source-drain regions.
制片人
申请人：International Business Machines Corporation
地址：Armonk NY US
入耳式耳机怎么戴国籍：US
继母守则
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