4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL2501-G Series Features:
• Halogens free. •
Current transfer ratio
(CTR: 80~600% at I F =5mA, V CE =5V) • High isolation voltage between input and output (Viso=5000 V rms ) • Creepage distance >7.62 mm
•
Operating temperature up to +110°C • Compact small outline package • Pb free and RoHS compliant. • UL approval •
VDE approval • SEMKO approval • NEMKO approval • DEMKO approval • FIMKO approval • CSA approval
Description
枯瘦的反义词The EL2501-G ries of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound..
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Schematic
Applications
• Programmable controllers泰迪配种
• System appliances, measuring instruments • Telecommunication equipments
上海交东大学• Home appliances, such as fan heaters, etc.
600字随笔
• Signal transmission between circuits of different potentials and impedances
Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL2501-G Series Absolute Maximum Ratings (T a =25°C)
Parameter
黄焖羊肉的做法最正宗的做法Symbol Rating Unit Forward current
I F 60 mA Peak forward current (PW=100us,duty cycle = 1%)
I FP 1 A Rever voltage V R
驱动备份6 V 100
mW
Input
Power dissipation
Derating factor ( aboveT a = 100°C) P D
apologized5.8 mW/°C 150
mW Power dissipation
Derating factor (above T a = 100°C)
P C
5.8
mW/°C Collector current I C 50 mA Collector-Emitter voltage V CEO 80 V Output
Emitter-Collector voltage
V ECO 7 V Total power dissipation P TOT 200 mW Isolation voltage *1 V ISO 5000 V rms Operating temperature T OPR -55 ~ +110 °C Storage temperature T STG -55 ~ +125
°C Soldering temperature *2 T SOL
260
°C Notes
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4 are shorted together. *2 For 10 conds.
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL2501-G Series Electrical Characteristics (T a =25°C unless specified otherwi)
Input
Parameter
Symbol Min. Typ.* Max. Unit Condition
Forward voltage V F
- 1.2 1.4 V I F = 10mA Rever current I R
- - 5 µA V R = 5V Input capacitance
C in
-
50
250
pF
V = 0, f = 1MHz
Output
Parameter
Symbol Min. Typ.* Max. Unit Condition
Collector-Emitter dark current
I CEO - - 100 nA V CE = 80V, I F = 0mA Collector-Emitter breakdown voltage BV CEO 80 - - V I C = 0.1mA Emitter-Collector breakdown voltage
BV ECO
7
-
-
V
I E = 0.1mA
Transfer Characteristics (T a =25°C unless specified otherwi)
Parameter
Symbol
Min. Typ.* Max. Unit
Condition
EL2501N 80 - 600 EL2501H 80 - 160 EL2501W
130 - 260 EL2501L 200 - 400 EL2501K 300 - 600 EL2501Q 100 - 200 Current
Transfer ratio
EL2501D移动互联网概念股
CTR 150 - 300 %
I F = 5mA ,V CE = 5V
Collector-Emitter saturation voltage V CE(sat) - 0.1 0.3 V I F = 10mA ,I C = 2mA Isolation resistance R IO 1011 - - Ω V IO = 1K Vdc, 40~60% R.H. Floating capacitance C IO - 0.6 1.0 pF V IO = 0, f = 1MHz Cut-off frequency fc - 80 - kHz V CE = 5V, I C = 2mA R L = 100Ω, -3dB Ri time t r - 3 18 µs Fall time
t f -
5
18
µs
V CC = 10V, I C = 2mA, R L = 100Ω
* Typical values at T a = 25°C
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL2501-G Series Typical Performance Curves
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL2501-G Series
Figure 7. Switching Time Test Circuit & Waveforms
I F
Output
