4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL817-G
绘画对孩子的好处Series Features:
•Halogens free.
•Current transfer ratio
(CTR: 50~600% at I F =5mA,V CE =5V)• High isolation voltage between input and output (Viso=5000 V rms )•Creepage distance >7.62 mm
• Operating temperature up to +110°C • Compact small outline package •Pb free and RoHS compliant.• UL approved (No. E214129)• VDE approved (No. 132249)• SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CSA approved • CQC approved
Description
The EL817ries of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
• Programmable controllers
早餐包子的做法
• System appliances, measuring instruments • Telecommunication equipments
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances
Pin Configuration 1.Anode 2.Cathode 3. Emitter 4.Collector
Schematic
4 PIN DIP PHOTOTRANSISTOR
来意PHOTOCOUPLER
EL817-G Series Absolute Maximum Ratings (T a =25°C)
Parameter
Symbol Rating Unit Forward current
I F 60mA Peak forward current (1us, pul)
I FP 1A Rever voltage V R
6V 100
mW Input
Power dissipation
Derating factor (above T a = 100°C)P D
2.9mW/ C 150
mW Power dissipation
Derating factor (above T a =100 C)
P C
5.8
mW/ C Collector current I C 50mA Collector-Emitter voltage V CEO 80V Output
学前教育职业规划Emitter-Collector voltage
V ECO 7V Total power dissipation P TOT 200mW Isolation voltage
*1
V ISO 5000V rms Operating temperature T OPR -55~+110°C Storage temperature T STG
-55~+125
°C Soldering temperature
*2
T SOL
260
°C
Notes
*1
AC for 1 minute, R.H.= 40 ~ 60% R.H.In this test, pins 1 & 2 are shorted together, and pins 3 & 4 are shorted together.*2 For 10 conds.
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL817-G Series Electrical Characteristics (T a =25°C unless specified otherwi)
Input
Parameter
Symbol Min.Typ.*Max.Unit Condition
Forward voltage V F
- 1.2 1.4V I F =20mA Rever current I R
--10µA V R =4V Input capacitance
C in英语万能作文模板
-30
250
pF
V =0,f =1kHz
Output
Parameter
Symbol Min.Typ.*Max.Unit Condition
Collector-Emitter dark
current
I CEO --100nA V CE =20V, I F =0mA Collector-Emitter breakdown voltage BV CEO 80--V I C =0.1mA Emitter-Collector breakdown voltage
鹿的简笔画BV ECO
7
--V
I E =0.1mA
Transfer Characteristics (T a =25°C unless specified otherwi)
Parameter
Symbol Min.Typ.*Max.Unit Condition
EL81750-600EL817A 80-160EL817B
130
-260EL817C 200-400EL817D 300-600EL817X 100-200Current Transfer
ratio
EL817Y
家长对孩子的家庭教育
CTR 150
-300%
I F =5mA ,V CE = 5V
Collector-Emitter
saturation voltage V CE(sat)-0.1
0.2V I F =20mA ,I C =1mA Isolation resistance R IO 5×1010
--ΩV IO = 500Vdc,40~60% R.H.Floating capacitance C IO -0.6 1.0pF V IO =0, f =1MHz Cut-off frequency fc -80-kHz V CE =5V, I C =2mA R L =100Ω, -3dB Ri time t r -618µs Fall time河北古城
t f
-8
18
µs
V CE =2V, I C =2mA,R L =100Ω
* Typical values at T a = 25°C
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER EL817-G Series Typical Performance Curves
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL817-G Series Figure 7. Switching Time Test Circuit & Waveforms
I C R L
V CC
Output
Input
Pul
Output Pul
10%90%
t f t r t off
t on
