FSSZ Reliability Monitoring Program
HTRB HTGB HTSL Q"ty 77*3
Read Point @168 hrs
TMCL
HAST THBT PRCL
Room TMCL Aging
E/T
ACLV
Ambient
Read Point Read Point Read Point Read Point Read Point Read Point Read Point Read Point @500hrs @100 cycs
海螺种类@48hrs @ 168hrs
@ 1k cycs
@1K hours
@500 cycs @ 1K hours
E/T
E/T
E/T
E/T
E/T
SEM
SEM
SEM
Read Point Read Point Read Point Read Point Read Point Read Point Read Point Read Point @1000hrs
@ 500 cycs
@ 96 cycs
@ 500 hrs
@ 5k cycs
@4K hours
@1.5K cycs
@ 4K hours
E/T
E/T
E/T
E/T
E/T
SEM
SEM
SEM
Read Point Read Point @1000 hrs
@10K/8572
cycs E/T
E/T
Samples Pulling
Preconditioning
Q'ty: 77*5
Whisker Q'ty: 18*3
V/I
V/I
SMD
FSSZ Reliability Lab Capabilities -1
Autoclave (ACLV)高温高湿高压蒸煮试验
Test Description (JESD22-A102)
*No bias is applied to the devices during this test. *121 ℃, 100%RH,15PSIG (JESD22-A102)
Purpo
*Evaluate the moisture resistance integrity of no hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments.
*Identify failure mechanisms internal to the package and is destructive.
Effects
*Corroded device terminals/leads or the formation of conducting matter between the terminals.
Temperature Cycle (TMCL)高低温循环试验
Test Description (JESD22-A104)
*No bias is applied to the devices during this test. *-65℃~ 150℃-55℃~ 150℃or -40℃~ 125℃
Purpo
*Evaluate the thermo-mechanical properties of the complex IC package.
*Detecting stress relief failures from the mismatch in thermal coefficients of expansion for the die/package structure.Effects
*Plastic deformation, crack propagation, cracked passivation, thin film crack
*Interlayer dielectric voids or cracks, displaced metallization,stress-induced metallization voids, broken or sheared bond wires and bonds, bond pad cratering, die attach paration or failure,
Air to Air
Liquid to Liquid
FSSZ Reliability Lab Capabilities-2
High Temperature Rever Bias
Test (HTRB)高温反偏压试验
Test Description (JESD22-A108)
*U test boards
软陶作品*HTRB test is configured to rever bias major power handling
junctions of the device samples.前的英语
*150℃175 ℃or 125 ℃Multi-biad and intelligent leakage
monitoring
Purpo
*Devices are characteristically operated in a static operating
mode at or near, 80% of maximum-rated breakdown voltage
and/or current levels to determine the effects of bias conditions
and temperature on solid state devices over time.
Effects爸爸的生日
*Silicon Defects, oxide defects, manufacturing defects, dielectric
Breakdown.
*Ionic contamination, mobile charges, including surface inversion.
electro migration (under high current density conditions)
High Temperature Gate Bias (HTGB)
高温栅极偏压试验(JESD22-A108)
Test Description
*HTGB test bias gate or other oxides of the devices samples.
*150℃or 175 ℃, Biad and intelligent leakage monitoring
Purpo
*Device are normally operated in a static mode at, or near, 100%
of maximum-rated oxide breakdown voltage levels. The particular
bias conditions should be determined to bias the maximum
number of gate in the device.
Effects
*Silicon Defects, oxide defects, manufacturing defects, dielectric
Breakdown.
*Ionic contamination, mobile charges, including surface inversion.
茶居electro migration (under high current density conditions)
FSSZ Reliability Lab Capabilities-3
Temperature Humidity Bias (THBT)
古筝4和7怎么弹
恒温恒湿偏压试验
Test Description (JESD22-A101)
*U Test boards
*85℃/85%RH,Biad
Purpo
*Evaluate the integrity of plastic packages to moisture ingress to
the die surface.Under conditions of high humidity and
temperature, moisture can permeate the molding compound or
travel up leads.
Effects
*Corrosion sites at or near bond pads, expod metal at defects
in passivation, Anodic-halides, Cathodic-phosphorus levels in
glass, open metallization
*Shorting across metallic conductors through insulators and
Gold, copper, silver dendrites.
*Mobile charges and top surface charge.
High Temperature Storage Life test
(HTSL)高温储存试验
Test Description (JESD22-A103)
*150℃or 175 ℃
Purpo
*Detect instability mechanisms associated with shelf life
(storage).
*Determining the effects of storing devices at elevated
temperatures without electrical applied.
Effects
*Intermetallic growth at bonds of dissimilar metals -Gold wire
bonded devices.
*Chemical reactions -Molding compound or die attach impurities
relead. Charge Loss in programmable products due to defects
in oxides
FSSZ Reliability Lab Capabilities-4 Preconditioning
预处理试验
Tester Description(JESD22-A113)
*Acoustic Microscopy Inspections -> C-SCAN->T/C(5Cycles) ->
Bake(24hrs 125C) -> Soak -> IR Reflow (3cycles) ->flux
application and Acoustic Microscopy Inspections->C-SCAN
Soak time in hours
研究课题怎么写
Level TEMP.(℃)RH(%)Time(hrs)Packing Condition
I8585168Non Dry Packing
II8565168Dry Packing
II-a6060120Dry Packing
III3060192Dry Packing Purpo
*Simulate stress encountered by surface mounted packages
from the time products are shipped to customers through the
asmbly process onto PC boards.
Effects
*Popcorn, external / Internal package cracking, die surface
delamination, die paddle or die attach delamination, electrical
failure due to ball bond lifts or bond wire shear, cracked Die.
骂人的
