MP2012电源管理芯片

更新时间:2023-05-16 08:41:19 阅读: 评论:0

S  C O N F I D E N T I A L T E R N A L  U S E  O N L Y
O T  D I S T R I B U T E MPS CONFIDENTIAL AND PROPRIETARY INFORMATION - AIVIN INTERNAL USE ONLY
MP2012
Low Voltage, 2.7-6V Input,1.5A, 1.2MHz
Synchronous Step-Down Converter
The Future of Analog IC Technology DESCRIPTION
The MP2012 is a fully integrated, internally compensated 1.2MHz fixed frequency PWM step-down converter. It is ideal for powering portable equipment that runs from a single cell Lithium-Ion (Li+) Battery, with an input range from 2.7V to 6V. The MP2012 can provide up to 1.5A of load current with output voltage as low as 0.8V. It can also operate at 100% duty cycle for low dropout applications. With peak current mode control and internal compensation, the MP2012 is stable with ceramic capacitors and small inductors. Fault condition protection includes cycle-by-cycle current limiting and thermal shutdown.
MP2012 is available in the small 6-pin 3mmx3mm QFN package.
FEATURES  •    2.7-6V Input Operation Range
• Output Adjustable from 0.8V to VIN  • 1μA Max Shutdown Current. • Up to 95% Efficiency
• 100% Duty Cycle for Low Dropout
Applications
•    1.2MHz Fixed Switching Frequency
• Stable with Low ESR Output Ceramic
Capacitors  • Thermal Shutdown
• Cycle-by-Cycle Over Current Protection  • Short Circuit Protection
• Available in 6-pin 3x3mm QFN
APPLICATIONS
• DVD+/-RW Drives
• Smart Phones • PDAs • Digital Cameras • Portable Instruments
“MPS” and “The Future of Analog IC Technology” are Trademarks of Monolithic Power Systems, Inc.
TYPICAL APPLICATION
E fficiency vs.Load Current
LOAD CURRENT(A)
修炼爱情吉他谱E F F I C I E N C Y  (%)
00.30.60.9  1.2  1.5
M P S  C O N F
L A I
V I N  I N T E R N A L Y
D O  N O T  D I S T
E ORDERING INFORMATION
Part Number* Package  Top Marking
Free Air Temperature (T A )
MP2012DQ
QFN6(3mm x 3mm)
9E
–40°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP2012DQ–Z).
For Lead Free, add suffix –LF (e.g. MP2012DQ–LF–Z)
PACKAGE REFERENCE
ABSOLUTE MAXIMUM RATINGS (1)
PVIN, VIN –0.3V to + 6.5V SW –0.3V to V IN  + 0.3V EN, FB –0.3V to +6.5V –40°C to +85°C
Continuous Power Dissipation (T A  = +25°C) (2)
………………………………………………....2.5W 150°C 260°C Storage Temperature .............–65°C to +150°C
Recommended Operating Conditions (3)
Supply Voltage V IN .............................2.7V to 6V Operating Junct. Temp (T J ).....–40°C to +125°C
Thermal Resistance (4)
θJA θJC
QFN6 (3mm x 3mm)...............50......12...°C/W
Notes:
1) Exceeding the ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
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maximum junction temperature T J (MAX), the junction-to-ambient thermal resistance θJA , and the ambient temperature T A . The maximum allowable continuous power dissipation at any ambient temperature is calculated by P D (MAX) = (T J (MAX)-T A )/θJA . Exceeding the maximum allowable power dissipation will cau excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.
M P S  C O N F I D E N T I A L A I筋疲力尽
V I N  I N T E R N A L  U S E  O N L Y
D O  N O T  D I S T R I B U T
E ELECTRICAL CHARACTERISTICS (5)
V IN  = V EN  = 3.6V, T A  = +25°C, unless otherwi noted.
Parameters Condition Min Typ Max Units Supply Current正能量的短句
V EN_= V IN , V FB  = 0.9V
600 750 μA
Shutdown Current V EN_= 0V, V IN  = 6V  0.01    1 μA Thermal Shutdown Trip Threshold Hysteresis =
20°C  150  °C EN Trip Threshold -40°C ≤ T A  ≤ +85°C 0.3    1.0    1.5 V EN Input Current V EN  = 0V  0.1    1.0 μA EN Input Current V EN  = 6V    6  μA IN Undervoltage Lockout Threshold Rising Edge    2.15 2.40 2.65 V IN Undervoltage Lockout Hysteresis  160  mV
Regulated FB Voltage
T A  = +25°C
苹果定位
-40°C ≤ T A ≤ +85°C 0.784 0.776 0.800 0.800 0.816 0.824
V FB Input Bias Current V FB  = 0.8V -50 -2 +50 nA SW PFET On Resistance I SW  = 100mA  0.25  Ω SW NFET On Resistance I SW  = -100mA  0.2  Ω
SW Leakage Current V EN =0V; V IN =6V
V SW_=0V
-1 0.1 1 μA
SW Leakage Current V EN =0V; V IN =6V
V SW_=6V
-5 1.5 5 μA SW PFET Peak Current Limit Duty Cycle=100%    3.0    A Switching Frequency    1.0    1.2    1.4 MHz
Notes:
5) Production test at +25°C. Specifications over the temperature range are guaranteed by design and characterization.
M P S  C O N F I D E N T I A L A I
V I N  I N T E R N A L  U S E  O N L Y
D O  N O T  D I S T R I B U T
E PIN FUNCTIONS
Pin #
Name
Description
1 FB
Feedback input. An external resistor divider from the output to GND, tapped to the FB
pin ts the output voltage.
2 GND,
Expod Pad Ground pin. Connect expod pad to ground plane for proper thermal performance.
3 SW
Switch node to the inductor. 4 PVIN Input supply pin for power FET.
5 VIN Input Supply pin for controller. Put small decoupling ceramic near this pin.
6
EN
Enable input, “High” enables MP2012. EN is pulled to GND with 1Meg internal resistor.
M P S
E N T I A L A I
V I N  I N T E S E  O N L Y
D O  N O T
I B U T E TYPICAL PERFORMANCE CHARACTERISTICS
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V IN  = 5V, V OUT  = 1.8V, L=3.3uH, T A  = +25ºC, unless otherwi noted.
Load Regulation Enable Supply Current vs. Input Voltage
500
550
6006507007508008502.5
3  3.5
4  4.5
5  5.56
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V IN (V)
Ca Temperature Rivs. Output Current
05
10
152********
0.51  1.5OUTPUT CURRENT (A)
DUTY CYCLE蜻蜓是益虫吗
Peak Current vs. Duty
L I N E  R E G U L A T I O N
L O A D  R E G U L A T I O N
LOAD CURRENT(A)INPUT VOLTAGE (V)
Line Regulation
00.51  1.5P E A K  C U R R E N T (A )
-0.60%
-0.40%-0.20%0.00%
0.20%0.40%2  2.53  3.54  4.55  5.56
E fficiency vs.Load Current
LOAD CURRENT(A)
E F F I C I E N C Y  (%)
10203040506070809000.30.60.9  1.2  1.5
1.5
2
2.5
3
3.5
4
4.5
40%50%60%70%80%90%100%

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