Transistors 1/2
2.5V Drive Nch MOS FET
南阳科技馆RTR025N03
z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET
z Features
1) Low On-resistance. 2) Space saving −small surface mount package (TSMT3).
3) Low voltage drive (2.5V drive).
偿还能力z
Switching学习机哪个好
z Packaging specifications and h FE
z Inner circuit
z Absolute maximum ratings (T a=25°C)
∗1∗2∗1Parameter
排毒养颜吃什么好
V V DSS Symbol V V GSS A I D
A I DP A I S
A I SP W P D °C Tch °C
Tstg Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature
Range of storage temperature
Continuous Puld Continuous Puld
∗1 Pw ≤10µs, Duty cycle ≤1%∗2 Mounted on a ceramic board
Source current (Body diode)
30150−55 to +15012±2.5±100.8101.0
z Thermal resistance
Parameter
°C/W
简历图片Rth(ch-a)Symbol Limits Unit Channel to ambient
125
∗ Mounted on a ceramic board
∗
Transistors 2/2
z Electrical characteristics (T a=25°C)
相对分子量
z Body diode characteristics (Source-drain) (T a=25°C)
V SD
−
锐雯图片
−
1.2V
I S = 0.8A, V GS =0V魅力造句
Forward voltage
Parameter
Symbol Min.Typ.Max.Unit Conditions
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In ca of export from Japan, plea confirm if it applies to "objective" criteria or an "informed" (by MITI clau)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
