2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor Features
High Density Cell Design for Low R
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
D
S
G
SOT-23
(TO-236AB)
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
Stress exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to the levels is not recommended. In addi-tion, extended exposure to stress above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T C = 25°C unless otherwi noted.
Thermal Characteristics
Values are at T C = 25°C unless otherwi noted .累计百分比
Electrical Characteristics
Values are at T C = 25°C unless otherwi noted.
Symbol
Parameter
Value
Unit
2N7000
2N7002
NDS7002A
V DSS Drain-to-Source Voltage
60V V DGR Drain-Gate Voltage (R GS ≤ 1 M Ω )60V V GSS Gate-Source Voltage - Continuous
±20V Gate-Source Voltage - Non Repetitive (tp < 50 μS)±40
I D Maximum Drain Current - Continuous 200115280mA Maximum Drain Current - Puld
5008001500P D
Maximum Power Dissipation Derated above 25°C
400200300mW 3.2
1.6
2.4mW/°C T J, T STG Operating and Storage Temperature Range -55 to 150
-65 to 150
°C T L
Maximum Lead Temperature for Soldering Purpos, 1/16-inch from Ca for 10 Seconds
300°C
吃草莓的好处
Symbol
Parameter
Value
Unit
2N7000
2N7002
NDS7002A
R θJA
Thermal Resistance, Junction to Ambient
312.5
625
417
°C/W
Symbol
Parameter
Conditions
Type Min.
Typ.Max.Unit扫描打印
Off Characteristics
BV DSS Drain-Source Breakdown Voltage
V GS = 0 V, I D = 10 μA All
60
V周报总结
I DSS
Zero Gate Voltage Drain Current
V DS = 48 V, V GS = 0 V 2N70001μA V DS = 48 V, V GS = 0 V, T C = 125°C
1mA V DS = 60 V, V GS = 0 V
2N7002
NDS7002A 1μA V DS = 60 V, V GS = 0 V, T C = 125°C
自由的含义
0.5mA I GSSF
Gate - Body Leakage, Forward
V GS = 15 V, V DS = 0 V 2N700010nA V GS = 20 V, V DS = 0 V
惧怕2N7002NDS7002A
100nA I GSSR
Gate - Body Leakage, Rever
V GS = -15 V, V DS = 0 V 2N7000-10nA V GS = -20 V, V DS = 0 V 2N7002
NDS7002A
-100
nA
V GS = 5.0 V,
I D = 50 mA
0.090.15
I D(ON)On-State Drain Current V GS = 4.5 V,
V DS = 10 V 2N7000
ll的过去式
75600
mA
V GS = 10 V,
V DS≥2 V DS(on)2N7002
5002700
V GS = 10 V,
V DS≥2 V DS(on)NDS7002A
5002700
g FS Forward
Transconductance V DS = 10 V,
I D = 200 mA
2N7000浮躁怎么办
100320
mS
V DS≥ 2V DS(ON),
I D = 200 mA
2N7002
80320
V DS≥ 2V DS(ON),
I D = 200 mA
NDS7002A
80320
