2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·Dual N-Channel MOSFET ·Low On-Resistance
·Low Gate Threshold Voltage ·Low Input Capacitance ·Fast Switching Speed
·Low Input/Output Leakage
·
Ultra-Small Surface Mount Package
Maximum Ratings
@ T A = 25°C unless otherwi specified
Characteristic
Symbol 2N7002DW
Units Drain-Source Voltage
V DSS 60V Drain-Gate Voltage R GS £1.0M W V DGR
60V Gate-Source Voltage (Note 1)Continuous
Puld
V GSS ±20±40V Drain Current (Note 1)
Continuous
Continuous @ 100°C
水华是什么Puld
I D 11573800mA Total Power Dissipation
Derating above T A = 25°C (Note 1)P d 2001.60mW mW/°C Thermal Resistance, Junction to Ambient R q JA 625K/W Operating and Storage Temperature Range
T j ,T STG
改革开放四十年
-55 to +150
°C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pul width £300m s, duty cycle £2%.
A
M
J
L
F D B C
H
K团队建设活动方案
KXX
预防近视主题班会
G 1
S 1
S 2
G 2
D 1
D 2
宁夏风景Mechanical Data
·Ca: SOT-363, Molded Plastic
·Terminals: Solderable per MIL-STD-202,Method 208
·
Terminal Connections: See Diagram ·Marking: K72
·
Weight: 0.006 grams (approx.)
SOT-363
Dim Min Max A 0.100.30B
1.15 1.35C
2.00 2.20D 0.65 Nominal
F 0.300.40H 1.80 2.20J
¾0.10K 0.90 1.00L 0.250.40M
0.10
0.25
All Dimensions in mm
N E W P R O D U C T
查询2N7002DW供应商
Electrical Characteristics
@ T A = 25°C unless otherwi specified
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pul width £300m s, duty cycle £2%.
N E W P R O D U C T
00.2
0.4
0.6
0.81.0
1
2
3
45
I ,D R A I N -S O U R C E C U R R E N T (A )
D V ,DRAIN-SOURC
E VOLTAGE (V)Fig.1On-Region Characteristics
DS
12345
00.2R ,N O R M A L I Z E D D R A I N -S O U R C E O N -R E S I S T A N C E
D S (O N )I ,DRAIN CURRENT (A)
Fig.2On-Resistance vs Drain Current
D
67
0.40.60.8 1.0
00.5
1.0
1.5
2.0
-55
-30
-5
20
45
70
95
120
145
R ,N O R M A L I Z E D D R A I N -S O U R C E O N -R E S I S T A N C E
D S (O N )T ,JUNCTION TEMPERATUR
E (C)
Fig.3On-Resistance vs Junction Temperature
j °0
V ,GATE TO SOURCE VOLTAGE (V)Fig.4On-Resistance vs.Gate-Source Voltage
泥土拼音
GS
12
分手祝福的话34
5
6
腾讯风铃024681012141618
R ,N O R M A L I Z E D D R A I N -S O U R C E O N -R E S I S T A N C E
D S (O N )N
E W P R O D U C T
