NDS8936
Dual N-Channel Enhancement Mode Field Effect Transistor
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General Description
The N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell六年级下册科学书
水疗density, DMOS technology. This very high density process is银鱼鸡蛋汤>道德经第三十一章
especially tailored to minimize on-state resistance and provide
superior switching performance. The devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
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transients are needed.
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