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专利名称：Dram structure with multiple memory cells sharing the same bit- line contact
发明人：Tean-Sen Jen,Shiou-Yu Wang,Jia-Shyong
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申请号：US09/054547
国际田径联合会
申请日：19980403
公开号：US05955757A中华人民共和国证券法
公开日：
客户问候语19990921
专利内容由知识产权出版社提供真的有僵尸吗
摘要：The prent invention disclos a DRAM structure with multiple memory cells sharing the same bit-line contact. The DRAM structure of the prent invention compris: a substrate; an active region formed on the substrate, with a center region and a plurality of protrusion regions connecting to the two sides of the center region; a plurality of word- lines, disconnected from each other, each crossing the corresponding protrusion region; a plurality of channel regions, formed where the protrusion region overlaps with the word-lines; a plurality of source regions, formed at the outer areas of the channel regions; a sharing drain region, formed at the center region of the active region; a bit- line contact, formed on surface of the sharing drain region; a bit- line, crossing the center region and electrically connected to the sharing drain region via the bit-line contact; a plurality of capacitors, electrically connected to the source regions; and a plurality of metal lines, electrically connected to the corresponding word-lines.
申请人：NAN YA TECHNOLOGY CORP.
代理人：Michael D.Crowell & Moring LLP Bednarek
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