专利名称：Semiconductor CMOS Non-Volatile Memory
火灾自救逃生方法Device
玩电脑游戏的英文发明人：David Liu,Ben Sheen
申请号：US16158099
入场式解说词申请日：20181011
公开号：US20200119023A1
p友的自我修养公开日：
游泳套装
20200416
专利内容由知识产权出版社提供
专利附图：
摘要：A nonvolatile memory device may operate with a logic transistor, which includes a transistor gate formed of a material. The memory device includes a floating gate
formed of the material, a first-type fin, and a cond-type fin. The first-type fin includes a
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first-type channel, a first-type source, and a first-type drain. The first-type channel, the first-type source, and the first-type drain have a first conductivity type. The cond-type fin includes a cond-type channel, a cond-type source, and a cond-type drain. The cond-type source and the cond-type drain have the first conductivity type. The cond-type channel has a cond conductivity type opposite to the first conductivity type. The floating gate is positioned on the first-type channel and the cond-type channel.
持中申请人：David Liu,Ben Sheen
地址：Fremont CA US,Saratoga CA US新年英语怎么写
国籍：US,US
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