专利名称：Guard ring integrated LDMOS
环保征文>纸上谈兵指的是谁
发明人：Vishnu K. Khemka,Stephen J. Contino,Tahir
A. Khan,Adolfo C. Reyes,Ronghua Zhu
申请号：US12842660
申请日：20100723中考成绩查询
公开号：US08278710B2
公开日：徐组词
制作灯笼作文
20121002
专利内容由知识产权出版社提供
专利附图：
摘要：An LDMOSFET transistor () is provided which includes a substrate (), an epitaxial drift region () in which a drain region () is formed, a first well region () in which a source region () is formed, a gate electrode () formed adjacent to the source region () to define a纳豆的吃法
first channel region (), and a grounded substrate injection suppression guard structure that includes a patterned buried layer () in ohmic contact with an isolation well region () formed in a predetermined upper region of the substrate so as to be spaced apart from the first well region () and from the drain region (), where the buried layer () is dispod below the first well region () but not below the drain region ().
汤圆怎么画
申请人：Vishnu K. Khemka,Stephen J. Contino,Tahir A. Khan,Adolfo C. Reyes,Ronghua Zhu
地址：Phoenix AZ US,Gilbert AZ US,Tempe AZ US,Tempe AZ US,Chandler AZ US
国籍：US,US,US,US,US
代理机构：Hamilton & Terrile, LLP
代理人：Michael Rocco Cannatti
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