专利名称：Raid Source/Drain Field Effect Transistor
发明人：Bruce B. Doris,Kangguo Cheng,Ali
自豪是什么意思
Khakifirooz,Pranita Kulkarni
申请号：US13602644
申请日：20120904
公开号：US20120329232A1
逝者安息生者公开日：
20121227
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摘要：In one exemplary embodiment of the invention, a miconductor structure includes: a substrate; and a plurality of devices at least partially overlying the substrate,where the plurality of devices include a first device coupled to a cond device via a first
炒虾娜拉走后怎样raid source/drain having a first length, where the first device is further coupled to a cond raid source/drain having a cond length, where the first device compris a transistor, where the first raid source/drain and the cond raid source/drain at least partially overly the substrate, where the cond raid source/drain compris a terminal electrical contact, where the cond length is greater than the first length.
申请人：Bruce B. Doris,Kangguo Cheng,Ali Khakifirooz,Pranita Kulkarni民主测评会议记录
地址：Brewster NY US,Guilderland NY US,Slingerlands NY US,Slingerlands NY US
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国籍：US,US,US,US
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