专利名称：Near-Unity Photoluminescence Quantum
Yield in MoS2收缩毛孔精华
发明人：Matin Amani,Der-Hsien Lien,Daisuke
新晴野望>人在途中Kiriya,James Bullock,Ali Javey
申请号：US15294707
申请日：20161015
公开号：US20170110338A1
公开日：
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20170420
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专利附图：
亥姆霍兹定理摘要：Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-西安最佳旅游时间
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merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoSis reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-bad chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoSmonolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest obrved lifetime of 10.8±0.6 nanoconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lars, and solar cells bad on 2D materials.
申请人：Matin Amani,Der-Hsien Lien,Daisuke Kiriya,James Bullock,Ali Javey
地址：Berkeley CA US,Berkeley CA US,Berkeley CA US,Tarcutta AU,Lafayette US 国籍：US,US,US,AU,US
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