Organic optoelectronic materials and devices, which is also called ‘plastic electronics’, attrached focus attention in past decade due to their potential application in large area and low cost flexible displays, solid-state lighting, radio frequency identification (RFID) cards and electronic papers etc. As important parts of organic optoelectronic devices, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic light-emitting transistors (OLEFTs) have made great achievements. The performance of the optoelectronic devices depends not only on the properties of the organic miconductors involved, but is also dramatically affected by the properties of other functional layers and the nature of the interfaces prent. Therefore, interface engineering, a novel approach towards high-performance OFETs, is a vital task for organic optoelectronic devices. Electrode/organic interfaces, dielectric/organic interfaces, organic/organic interfaces and organic/atmosphere interfaces are the three frequently reported interfaces in organic devices. In this disrtation, a systematic rearch has been carried out centering on the interface engineering of organic optoelectronic devices. With investigation of interface phenomenon and effective interface modification, dramatic decrea of power consumption and cost, obvious ehancement of device performance and improvement of stability are achieved. The main results are obtained as follows: 1: Exploration of novel anode modification approach for OLEDs to reduce the power consumption and enhance the efficiency. Power consumption and light emitting property are the key parameters for the real application of organic light-emitting diodes. In fact, modification of electrodes is a widely applied approach to improve device performance of OLEDs since it can optimize the devices performance without change of organic functional materials. We demonstrated that the improvement of interface contact between ITO anode and organic miconductor layer can be realized by the introduction of ultrathin hexadecafluoro copper phthalocyanine (F16CuPc) layer. Besides, The modification brings on formation of dipole layer on the ITO surface, which in turn leads to workfunction enhancement of ITO anode and dramatic decrea of hole injection barrier. With device design and optimization, we fabricated high performance low-operation voltage single-layer, double-layer and multi-layer OLEDs with tris(8-quinolinolato)aluminum (Alq对母校的祝福3) as emissive layer. For the single layer Alq3 devices, the modification of the anode results in the significant enhancement in the current efficiency by about 30 times. The operation voltage decrea obviously for double layer devices, with minimum turn-on voltage of 2.6 V. As for multilayer OLEDs, the maximum current efficiency up to 7.63 cd/A and low turn-on voltage of 2.89 V are obtained by improving carrier density in the combination zone and optimization of carrier balance. The performance is one of the best one for OLEDs with Alq3 light emitting layer（Patent Number: ZL 200510126485.X; Di CA, et al. Appl. Phys. Lett. 2007, 90, 133508；Di CA, et al. Appl. Phys. Lett. 2006, 89, 033502）. 2: Development of novel organic light-emitting transistor structure and realization of light emission under ambient atmosphere. Organic light-emitting transistor is a highly integrated organic optoelectronic devices since both field-effect and light emitting can be realized in the same channel simultaneously. With optimized photolithograph techniques, we fabricated OFETs with Au and Al rves as source and drain electrode, respectively. Then, the laterally arranged heterojunction structures are achieved by successively inclined deposition of the field-effect and light-emitting materials. It has been obrved that introduction of Au-Al source-drain electrodes and laterally arranged heterojunction structures result in enhancement of electron injection and improved carrier density of both holes and electrons. Besides, the designed device structure offers an ideal and widely applicable one to realize effective integration of field-effect property and light emission. It is becau the two kind of organic miconductors could take full u of their own advantages. We fabricated both small molecular and polymer bad OLEFTs with pentacene, Alq3 and TPA-PPV, respectively（Patent Number: 喧哗的近义词ZL 200610089448.0；ZL 200510130758.8; Di CA, et al. Appl. Phys. Lett. 2006, 88, 121907；Di CA, et al. Adv. Funct. Mater. 2007, 17, 1567.实词和虚词的区别）. The results constitute first demonstration of organic light-emitting transistor under ambient atmosphere（Cicoira, F. et al. Adv. Funct. Mater. 2007, 17, 3421；Cicoira, F. et al. J. Mater. Chem. 2008, 18, 158）. 3: Exploration of novel approach to fabricate high performance low-cost OFETs. Low cost plays dominant role in determining the further development of OFETs. Source-drain electrodes are important parts in OFETs. Gold has been the most widely applied source–drain electrode for OFETs to date, due to its high conductivity, good stability, and formation of excellent contact with many p-type organic miconductors. However, the high cost of gold is an adver factor in practical applications. On the other hand, low-cost electrodes such as Cu and Ag, are unsuitable for most p-type OFETs due to their relatively low workfunction. We provide a simple method to modify the bottom contact Cu or Ag electrodes with organic charge transfer compounds (Cu-TCNQ or Ag-TCNQ). The modification enhanced the workfunction of electrodes and improved the electrode/organic miconductor contact which results in dramatic improvement of carrier injection. Therefore, we fabricated low cost Cu or Ag bad OFETs with device performance comparable with the one of Au bad OFETs. Besides, we investigated the influence of electrode morphology on the device performance by the formation of nanosized Cu electrodes. It has been discovered that introduction of source-drain electrodes with proper roughness is helpful to reduce the contact resistance. Fabrication of OFETs bad on many organic miconductors proved that it is a universal approach to improve the performance of bottom contact devices（Patent Number: 200610089591.X；Di CA, et al. J. Am. Chem. Soc. 2006, 128, 16418; Di CA, et al. Phys. Chem. Phys. Chem.2008, 10, 2302 (Front Cover)）. The result posss potential application in the patterning of organic crystals and construction of corresponding devices（Di CA et al. Chem. Mater. 2009, 21, 4873）. 4: Discovery and investigation of high performance top contact OFETs with Cu electrodes. The typical OFET electrode structure, with a bottom gate, can be divided into top-contact and bottom-contact configurations. With varied electrode deposition quence, the OFETs with different electrode structure required different modification techniques and exhibit varied device performance. Top-contact OFETs usually have a good electrode/organic layer contact and exhibit high device performance. We discovered that many organic miconductors bad OFETs with Cu top-contact electrodes show comparable device performance with the one of Au top-contact devices. The most excellent performance up to 0.8 cm2V-1s-1 can be obtained for pentacene FETs with Cu top-contact. The high performance is result from good electrode/organic layer contact and the formation of CuxO during the electrode deposition process or device storage in air. The spontaneous formed CuxO posss matched energy level with many organic miconductors and bring on improved device performance (Patent Application Number: 200710118153.6；Di CA, et al. Adv. Mater. 2008, 阮玲玉电影20, 1286.). The results thus provide an effective way towards high performance low cost top-contact OFETs (High-tech Materials Alert, 2008, 25, 9). 5: Development of novel graphene patterning method and its applications in OFETs. Graphene, single or few layer of two dimensional graphite, received great interest among condend physics and material sciences due to its unusual and stable structure. We developed a novel vapor deposition method with ethanol as the carbon source时光能倒流吗 to fabricate patterned graghene using the patterned copper or silver and demonstrated its application in OFETs. The patterned graphene exhibit good contact with organic miconductors, with low carrier injection barrier for p-type OFETs and can rve as excellent source-drain electrodes for OFETs. The pentacene bad bottom-contact devices with channel length of 5 m can reach high mobility of 0.53 cm2V-1s-1 which is one of the best result for pentacene bottom contact devices with bare SiO2 dielectric layer (Patent Application Number: 200710177814.2; Di CA, et al. Adv. Mater. 2008, 20, 3289). The result demonstrates novel approach to fabricate patterned graphene and open a new application of graphene in OFETs (NPG, Asia Materials, /asia-materials/highlight.php?id=291；Pang, SP 背肌训练et al. Adv. Mater. 2009, 21, 3488；Cao Y, et al. Adv. Funct. Mater. 2009, 19, 2743). The result is the first experimental step towards integrating graphene and conjugated organics（Burghard, M. et al. Adv. Mater. 2009, 21，2586.）. 喝小米粥会胖吗6: Discovery of relationship between the device stability and dielectric/organic layer interfaces and fabrication of high performance pentacene FETs. Device stability, a hot topic in the organic optoelectronic device field, is widely believed to be related to the properties of organic miconductors. Pentacene is the most widely investigated organic miconductor for OFETs. However, poor device stability is the key shortcomings that impede its real application. We discovered that the device stability of pentacene OFETs in air is strongly related to the properties of dielectric layers. The device performance of pentacene FETs with bare SiO2 can maintain for 7 months. By the investigation of relationship between the device stability and dielectric layer surface energy, we suggest the pentacene aggregation and pha transfer should be responsible for the device performance degradation for devices with low surface energy dielectric layer (OTS modified SiO2). We obtained high performance pentancene FETs with high mobility up to 1.8 cm2V-1s-1 and excellent stability by the optimization of dielectric layer（Di CA, et al. Phys. Chem. Chem. Phys. 2009, 11, 7268.）. In summary, centering on investigation of interface phenomenon, we fabricated high performance OLEDs, OFETs and OLEFTs by the device design and optimization. Also, a ries of novel interface approaches were explored to improving the device performance and stability, lowering the the fabrication cost and power consumption (Di CA, et al. J. Phys. Chem. B 2007, 111, 14083(Feature Article, Front Cover), Di CA, et al. Acc. Chem. Res. 2009，42，1573). The results might boost further development of organic optoelectronic devices towards real applications. |
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