专利名称：Method of making a contact hole in a miconductor device
发明人：Masanori Tsukamoto
形容城市繁华的成语申请号：US08/495268
申请日：19950627
贺国庆公开号：US05643833A
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公开日：
吉他和弦指法图>孩子厌学该咋办19970701
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摘要：A method of manufacturing a miconductor device with multi- layer interconnections is disclod. The method includes the steps of: forming a first electrically conductive interconnection layer on an insulating layer formed on a lower interconnection layer; forming an insulating layer on the first electrically conductive interconnection layer; forming an antireflection layer on the insulating layer; patterning the first electrically conductive interconnection layer, the insulating layer and the antireflection layer to form a stacked film compod of the first electrically conductive interconnection layer, the insulating layer and the antireflection layer; forming a sidewall on the stacked film; forming an interlayer insulating layer on entire surface of the stacked film having the sidewall formed thereon and the insulating layer; forming a contact hole to expo a lected portion of the lower interconnection layer using the sidewall as a mask; and depositing a cond electrically conductive interconnection layer in the contact hole at the expod portion of the lower interconnection layer.
申请人：SONY CORPORATION
完整近义词代理机构：Hill, Steadman & Simpson
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