学校运动会方案专利名称：DUMMY TSV (THROUGH SILICON VIA)
麻城烈士陵园SERVING TO IMPROVE PROCESS
UNIFORMITY AND HEAT DISSIPATION
发明人：PARK CHANGYOK,チャンヨック パーク
申请号：JP2016239334
申请日：20161209
公开号：JP2017073560A
公开日：
乔丹简介20170413
牛气的思维方式专利内容由知识产权出版社提供
专利附图：
闹元宵猜灯谜摘要：PROBLEM TO BE SOLVED: To provide a stacked miconductor die device and a method for designing and manufacturing it.SOLUTION: In a multi-chip stack of multiple
chips including active circuit regions respectively, a plurality of TSV structures 340-342, 350, 351, 360, 361, 370-373 for thermally conducting heat from a multi-chip stack are formed by patterning and etching a plurality of through silicon via (TSV) openings and filling a thermally conductive material in the plurality of TSV openings. The plurality of TSV openings include: a first larger TSV opening that extends through substantially the entirety of the multi-chip stack without penetrating any active circuit region; and a cond smaller TSV opening that extends down to but not through an active circuit
19桌面
region.SELECTED DRAWING: Figure 3
申请人：ADVANCED MICRO DEVICES INC,アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド
地址：アメリカ合衆国、９４０８８－３４５３ カリフォルニア州、サニィベイル、ピィ・
オゥ・ボックス・３４５３、ワン・エイ・エム・ディ・プレイス、メイル・ストップ・６８（番地なし）
国籍：US怎样画牡丹
代理人：早川 裕司，佐野 良太，村雨 圭介
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