专利名称：RELACS process to double the frequency or
pitch of small feature formation
发明人：Ramkumar Subramanian,Bhanwar
Singh,Marina V. Plat,Christopher F.
Lyons,Scott A. Bell
申请号：US09794632
申请日：20010228林表明霁色
公开号：US06383952B1
公开日：
自控力
20020507
人教版小学语文电子课本专利内容由知识产权出版社提供
责任是什么意思
共享wifi专利附图：
摘要：A method of doubling the frequency of small pattern formation. The method
includes forming a photoresist layer, and then patterning it. A RELACS polymer is spread over the patterned photoresist layer. Portions of the RELACS polymer on top portions of each patterned photoresist region are removed, by either etching or by polishing them off. Portions between each patterned photoresist region are also removed in this step. The patterned photoresist regions are removed, preferably by a flood exposure and then application of a developer to the expod photoresist regions. The remaining RELACS polymer regions, which were dispod against respective sidewalls of the patterned photoresist regions, prior to their removal, are then ud for forming small pattern regions to be ud in a miconductor device to be formed on the substrate. The small pattern regions can be ud to form parate poly-gates.退伍义务兵
中国风歌曲申请人：ADVANCED MICRO DEVICES, INC.表白送什么礼物
代理机构：Foley & Lardner
更多信息请下载全文后查看
