鸡汤心灵
Photoresists in extreme ultraviolet lithography冬至汤圆>亲自英语
(EUVL)
期刊名称： Advanced Optical Technologies
作者： De Simone, Danilo,Vesters, Yannick,Vandenberghe, Geert
年份： 2017年
爱国爱党关键词： CAR;EUV photoresists;MCR;metal-containing resist;metal oxide resist
形容花摘要：The evolutionary advances in photonsitive material technology, together with the shortening of the exposure wavelength in the photolithography process, have enabled and driven the transistor scaling dictated by Moores law for the last 50 years. Today, the shortening wavelength trend continues to improve the chips performance over time by feature size miniaturization. The next-generation lithography technology for high-volume manufacturing (HVM) is extreme ultraviolet lithography (EUVL), using a light source with a wavelength of 13.5 nm. Here, we provide a brief introduction to EUVL and p
atterning requirements for sub-0-nm feature sizes from a photomaterial standpoint, discussing traditional and novel photoresists. Emphasis will be put on the novel class of metal-containing resists (MCRs) as well as their challenges from
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