驾考宝典摩托车专利名称：Dual gate nitride processPhm
女生高冷魅力签名
发明人：Yung Hsien Wu
申请号：US10600699
申请日：20030623中国人民大学分数线
公开号：US20040178174A1
公开日：
20040916
专利内容由知识产权出版社提供
香蕉蒸熟吃的功效
鲍鱼做法大全小吃专利附图：
摘要：A method of manufacturing a miconductor device includes providing a wafer substrate having a surface, forming a first nitride layer over the wafer substrate,
providing a layer of photoresist over the first nitride layer, patterning and defining the photoresist layer, etching the first nitride layer unmasked by the photoresist to remove
at least a portion of the first nitride layer to expo at least a portion of the substrate surface, removing the photoresist layer, and depositing a cond nitride layer over the first nitride layer and the expod substrate surface to form a nitride structure having a first thickness and a cond thickness, wherein the first thickness includes a thickness of the first nitride layer.
君权神授申请人：PROMOS TECHNOLOGIES, INC.
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