王亚荣专利名称：Trilayer lithographic process 发明人：David A. Viduk
申请号：US07/922983
申请日：19920728我给你拜年
公开号：US05370969A
耳相公开日：
19941206
新手开车专利内容由知识产权出版社提供
五分钟懒人蛋糕做法摘要：The invention provides a trilayer structure and photolithographic method which permits u of high-resolution optics with a relatively small depth of focus for patterning a substrate. A trilayer lithographic structure in accordance with the invention compris: (a) an out-gas resistant planarization layer deposited on a substrate; (b) a chemical-vapor-deposited interfacial film formed on the planarization layer; and (c) a photonsitive resist layer of a thickness equal to or less than one micron deposited on the interfacial film. A method in accordance with the invention compris the steps of: (a) depositing an out-gas resistant planarization layer on a substrate; (b) chemical-vapor-depositing an interfacial film on the planarization layer; and (c) forming a photonsitive resist layer of a thickness equal to or less than one micron on the interfacial film.
咖喱焗饭>美丽村官申请人：SHARP KABUSHIKI KAISHA,SHARP MICROELECTRONICS TECHNOLOGY, INC.
魔法棒图片代理机构：Fliesler, Dubb, Meyer & Lovejoy
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