COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LI

更新时间:2023-05-15 04:20:23 阅读: 评论:0

寓言故事作文
专利名称:COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO
ACHIEVE SUB-THRESHOLD PATTERN
店铺风水学FEATURES
发明人:ZHU, John J.,WANG, Zhongze,DA, Yang
收入分配差距
学校应急预案申请号:EP14727110.0
申请日:20140411
公开号:EP2987034A1
公开日:
20160224五年级下册课文
专利内容由知识产权出版社提供
摘要:Features are fabricated on a miconductor chip. The features are smaller than the threshold of the lithography ud to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a cond portion of the feature to be parated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a cond sub-portion. A dimension of the first sub-portion is less than a dimension of a cond predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a miconductor device includes a first portion and a cond portion having a dimension less than a lithographic resolution of the first portion.
申请人:Qualcomm Incorporated
地址:5775 Morehou Drive San Diego, CA 92121 US
广西分数线
国籍:US
代理机构:Dunlop, Hugh Christopher 更多信息请下载全文后查看惊愕的近义词是什么
>燃油宝是什么

本文发布于:2023-05-15 04:20:23,感谢您对本站的认可!

本文链接:https://www.wtabcd.cn/fanwen/fan/89/898544.html

版权声明:本站内容均来自互联网,仅供演示用,请勿用于商业和其他非法用途。如果侵犯了您的权益请与我们联系,我们将在24小时内删除。

标签:差距   学校   专利
相关文章
留言与评论(共有 0 条评论)
   
验证码:
推荐文章
排行榜
Copyright ©2019-2022 Comsenz Inc.Powered by © 专利检索| 网站地图