专利名称：Selective patterning of metallization on a dielectric substrate
发明人：Charles W. C. Lin,Randy L. German
诚信体系建设申请号：US07/985663画鸟怎么画
申请日：19921204
公开号：US05830533A
一实公开日：迎新晚会主持词
maya作品
葬英雄
19981103
专利内容由知识产权出版社提供
摘要：A method of lectively fabricating metallization on a dielectric substrate is disclod. A ed layer is sputtered on a polymer dielectric, a patterned photoresist mask is dispod over the ed layer, expod portions of the ed layer are etched, the photoresist is stripped, and copper is deposited without a mask by electroless plating on the unetched ed layer to form well-adhering high density copper lines without exposing the photoresist to the electroless bath.
申请人：MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION疫情排查>suit的形容词
代理机构：Skjerven, Morrill, MacPherson, Franklin & Friel LLP
代理人：David M. Sigmond
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