形容海的唯美句子专利名称：SELF ALIGNED LITHO ETCH PROCESS
PATTERNING METHOD
几何画板使用教程发明人：Chih-Min HSIAO,Chien-Wen LAI,Shih-Chun
HUANG,Yung-Sung YEN,Chih-Ming LAI,Ru-
Gun LIU公众号改名
申请号：US17240692
申请日：20210426手镯的寓意
公开号：US20210249267A1
课程论公开日：
秀才是什么意思>统计表怎么画
20210812
专利内容由知识产权出版社提供
钢琴的结构
专利附图：
摘要：A method of defining a pattern includes forming a plurality of cut shapes and a
first plurality of openings within a first layer of a multi-layer hard mask to expo first portions of the cond layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A cond plurality of openings is formed within the spacer layer to expo cond portions of the cond layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the cond layer expod through the first plurality of openings and the cond plurality of openings are etched.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
地址：Hsinchu TW
国籍：TW
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