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专利名称：Quasi-hydrophobic Si-Si wafer bonding using
hydrophilic Si surfaces and dissolution of
interfacial bonding oxide
发明人：Joel P. de Souza,John A. Ott,Alexander
Reznicek,Devendra K. Sadana,Katherine L.
Saenger
申请号：US11031165
港澳三日游
申请日：20050107下雨的早晨
公开号：US08138061B2
公开日：
20120320
专利内容由知识产权出版社提供
专利附图：
摘要：The prent invention provides a method for removing or reducing the
芦笋种植thickness of ultrathin interfacial oxides remaining at Si—Si interfaces after silicon wafer bonding. In particular, the invention provides a method for removing ultrathin interfacial
oxides remaining after hydrophilic Si—Si wafer bonding to create bonded Si—Si interfaces having properties comparable to tho achieved with hydrophobic bonding. Interfacial oxide layers of order of about 2 to about 3 nm are dissolved away by high temperature annealing, for example, an anneal at 1300°-1330° C. for 1-5 hours. The inventive method is ud to best advantage when the Si surfaces at the bonded interface have different surface orientations, for example, when a Si surface having a (100) orientation is bonded to a Si surface having a (110) orientation. In a more general aspect of the invention, the similar annealing process may be ud to remove undesired material dispod at a bonded interface of two silicon-containing miconductor materials. The two silicon-containing miconductor materials may be the same or different in surface crystal orientation, microstructure (single-crystal, polycrystalline, or amorphous), and composition.
申请人：Joel P. de Souza,John A. Ott,Alexander Reznicek,Devendra K. Sadana,Katherine L. Saenger
地址：Putnam Valley NY US,Greenwood Lake NY US,Mount Kisco NY US,Pleasantville NY US,Ossining NY US
什么是恩格尔系数安在模国籍：US,US,US,US,US
代理机构：Scully, Scott, Murphy & Presr, P.C.
一个由一个月代理人：Louis J. Percello, Esq.
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