专利名称：Hybrid bonding with through substrate via
(TSV)
发明人：Jing-Cheng Lin
挣脱的拼音
申请号：US13943401毛里求斯旅游
申请日：20130716
公开号：US08860229B1
春节祝福短信公开日：
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20141014
专利内容由知识产权出版社提供
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专利附图：
摘要：Embodiments of forming a miconductor device structure are provided. The miconductor device structure includes a first miconductor wafer and a cond miconductor wafer bonded via a hybrid bonding structure, and the hybrid bonding蛋壳贴画
structure includes a first conductive material embedded in a polymer material and a cond conductive material embedded in a cond polymer material. The first conductive material of the first miconductor wafer bonded to the cond conductive material of the cond miconductor wafer and the first polymer material of the first miconductor wafer is bonded to the cond polymer material of the cond miconductor wafer. The miconductor device structure further includes at least one through substrate via (TSV) extending from a bottom surface of the cond miconductor wafer to a top surface of the first miconductor wafer.
作文写作
申请人：Taiwan Semiconductor Manufacturing Co., Ltd.男胖脸发型
地址：Hsin-Chu TW
国籍：TW
代理机构：Birch, Stewart, Kolasch & Birch, LLP
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