Flash memory

更新时间:2023-05-13 10:49:33 阅读: 评论:0

形容风大的词语
专利名称:Flash memory
海明威经典发明人:Toshihiro Abe,Yoshio Kasai,Naoki
Ootani,Mitsuru Sugita
湖南民歌申请号:US10193252
申请日:20020712
读书录公开号:US20030043626A1
公开日:形容办事快的成语
20030306
专利内容由知识产权出版社提供
专利附图:
摘要:Redundant circuits to are provided in correspondence to memory blocks to ,respectively. Bit lines BLto BLare located across the memory blocks. Spare bit lines SBLand SBLm are located across the redundant circuits to . When a memory cell failure
occurs in the memory block except a predetermined memory block (for example, a boot block) and when the bit line BLcorresponding to the memory cell failure is replaced with the spare bit line SBL, each of switches and is put into an on state in correspondence to the spare bit line SBL. Furthermore, each of switches and is put into the on state in correspondence to the bit line BL. As a result, the spare bit line SBLturns the redundant circuit corresponding to the memory block , to be connected to the memory block 申请人:ABE TOSHIHIRO,KASAI YOSHIO,OOTANI NAOKI,SUGITA MITSURU吉他拍弦
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