专利名称：BIPOLAR TRANSISTOR WITH GRADED BASE LAYER
发明人：WELSER, Roger, E.,DELUCA, Paul, M.,LUTZ, Charles, R.,STEVENS, Kevin, S.
申请号：US2003010143
申请日：20030331
公开号：WO03/088363P1
公开日：
20031023
专利内容由知识产权出版社提供
摘要：A miconductor material which has a high carbon dopant concentration includes gallium, indium, arnic and nitrogen. The disclod miconductor materials have a low sheet resistivity becau of the high carbon dopant concentrations obtained. The material can be the ba layer of gallium arnide-bad heterojunction bipolar transistors and can be lattice-matched to gallium arnide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the ba layer. The ba layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III - V elements that reprent the bulk of the layer. The flow rates of the III and V additive elements maintain an esntially constant doping-mobility product value during deposition and can be regulated to obtain pre-lected ba-emitter voltages at junctions within a resulting transistor.
申请人：WELSER, Roger, E.,DELUCA, Paul, M.,LUTZ, Charles, R.,STEVENS, Kevin, S.
地址：US,US,US,US,US
国籍：US,US,US,US,US
代理机构：PIERCE, N., Scott 更多信息请下载全文后查看
