专利名称：Metal capped copper interconnect
发明人：Michael Lane,Stefanie R. Chiras,Terry A.
Spooner,Robert Ronberg资源管理
申请号：US11376199
申请日：20060316
公开号：US20060157857A1
梅毒的潜伏期
公开日：
20060720
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摘要：A conducting material comprising: a conducting core region comprising copper and from 0.001 atomic percent to 0.6 atomic percent of one or more metals lected from iridium, osmium and rhenium; and an interfacial region. The interfacial region你我的爱情
长恨歌原文多少字compris at least 80 atomic percent or greater of the one or more metals. The invention is also directed to a method of making a conducting material comprising: providing an underlayer; contacting the underlayer with a ed layer, the ed layer comprising copper and one or more metals lected from iridium, osmium and rhenium; depositing a conducting layer comprising copper on the ed layer, and annealing the conducting layer at a temperature sufficient to cau grain growth in the conducting layer, yet minimize the migration of the one or more alloy metals from the ed layer to the conducting layer. The method further compris polishing the conducting layer to provide a polished copper surface material, and annealing the polished copper surface material at a temperature to cau migration of the one or more metals from the ed layer to the polished surface to provide an interfacial region in contact with a copper conductor core region. The interfacial region and the copper conductor core region compri the one or more metals.
申请人：Michael Lane,Stefanie R. Chiras,Terry A. Spooner,Robert Ronberg
地址：Cortlandt Manor NY US,Peekskill NY US,New Fairfield CT US,Cortlandt Manor NY US
国籍：US,US,US,US
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