专利名称：DEPOSITING EPITAXIAL LAYER FROM GASEOUS PHASE
河南萧记烩面发明人：PAULUS ZACHARIAS ANTONIUS MARIA VAN DER PUTTE
申请号：AU4604679
申请日：19790412
公开号：AU523988B2
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公开日：
19820826
古代尊称
专利内容由知识产权出版社提供光的反射现象例子
春节传说故事
摘要：Autodoping of an epitaxial layer during vapour pha deposition is reduced by removing part of an initially deposited layer 1 by gas etching before depositing the high resistivity layer 2. An initial gas etching step cleans the upper face 6 of substance 3 and simultaneously covers the lower face 7 with a miconductor layer 8 by a transport reaction utilising as source a layer of the miconductor material provided on the surface of the heating susceptor (4) on which the substrate rests. Layer 8 is incread in thickness during the cond etching step.特来
西班牙签证申请人：PHILIPS: GLOEILAMPENFABRIEKEN, N.V.
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