专利名称：Trench gate IGBT
发明人：HERZER, REINHARD, DR.,NETZEL, MARIO,
大学怎么选专业DR.
最新动画电影申请号：EP03006424.0
申请日：19971022
安东尼语录公开号：EP1320133A2
公开日：药方子
自豪的意思是什么
20030618
专利内容由知识产权出版社提供
专利附图：
摘要：Power miconductor component compris at least two similar cells, a
迎合的意思substrate region (1) of first conductivity, a rear side emitter (12) of cond conductivity,trench structures (5) in the shape of strips, islands or grids and provided with a gate
insulator (6) filled with polysilicon (7) and covered with a passivating layer (8), a vertical MOS structure arranged on the vertical sides of the trench structures, a bulk region (2) of cond conductivity, and a source and/or emitter region (3) of first conductivity lying in the bulk region and connect to an emitter electrode. Sink regions of first conductivity are formed in a doping region (18) of cond conductivity on the vertical sides. Preferably the sink regions and the doping regions together with the doping region and the substrate region and the trench structures form a pMOSFET, nMOSFET, bipolar transistors and/or integrated circuits.
拟办意见申请人：SEMIKRON ELEKTRONIK GMBH
地址：Sigmundstras 200 90431 Nürnberg DE
国籍：DE
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