专利名称：Fabrication of buried channel devices with
shallow junction depth
人事考勤发明人：Jih-Wen Chou,Shih-Wei Sun
申请号：US09173547
申请日：19981016感染梅毒后多久会出现症状
公开号：US06171895B1
吉林大学研究生招生公开日：
20010109
专利内容由知识产权出版社提供
月季玫瑰对照图
专利附图：
mobi格式
摘要：The channel doping profile of a PMOS field effect transistor consists of a
shallow distribution of a P-type dopant as a threshold adjust implant, a deeper
distribution of an N-type dopant as an buried channel stop implant and a still deeper
implantation of an N-type dopant as an antipunchthrough implant. A junction is formed between the P-type threshold adjust implant and the N-type buried channel stop implant at a relatively shallow de
农业的英语pth so that the depth of the buried channel region is limited by the buried channel stop implant, reducing the short channel effect. The channel doping profile is formed so that diffsion of impurities from the channel region to the gate oxide is prevented. The buried channel stop implant is made first through a sacrificial oxide layer. The sacrificial oxide is etched and a gate oxide layer and a thin film of polysilicon are deposited on the surface of the gate oxide. Both the threshold implant and the antipunchthrough implant are made through the thin polysilicon layer and the gate oxide layer. After the channel doping profile is defined, additional gate material is deposited and device construction is completed in the normal manner.象棋实用残局
申请人：UNITED MICROELECTRONICS CORP.
代理机构：Rabin & Champagne, P.C.情不自禁拼音
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