专利名称：GRAPHENE-BASED SUPERCONDUCTORS 发明人：LIU, Feng,LIU, Zheng,SI, Chen
申请号：US2014/030887广播电视广告播出管理办法
申请日：20140317宝宝流黄鼻涕
公开号：WO2014/146017A1
公开日：
盗火者
20140918
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专利附图：
摘要：The disclod implementations include graphene-bad superconductors and methods of producing graphene bad superconductors. In particular, in contrast to the inherent electrical characteristics of graphene, in accordance with various implementations graphene is converted to a BCS superconductor, having a critical路由配置
环境保护的标语temperature substantially above zero Kelvin (K), using a combination of charge doping and tensile strain. Charge doping enables enlargement of the Fermi surface of graphene, and tensile strain enables an increa in electron-phonon coupling. For example, a critical temperature T of 30 K can be achieved by a combination of a doping level of ~3.5x10 cm and a strain level of ~16%. In some implementations, a critical temperature T of 30 K makes graphene-bad superconductors commercially viable for a number of industrial applications.
申请人：UNIVERSITY OF UTAH RESEARCH FOUNDATION,LIU, Feng,LIU, Zheng,SI, Chen 地址：84108 US,84093 US,84102 US,100084 CN
国籍：US,US,US,CN
代理人：LOVEJOY, Brett, A.
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