专利名称：SOI device with body recombination region,
and method
发明人：Concetta E. Riccobene,Dong-Hyuk Ju
申请号：US09776197
申请日：20010202渤海石油职业学院
海参有什么功效
公开号：US06538284B1牛肉白菜饺子
公开日：
20030325
专利内容由知识产权出版社提供
专利附图：cp的意思
摘要：A transistor on an SOI wafer has a subsurface recombination area within its
新神曲body. The recombination area includes one or more doped subsurface islands, the doped islands having the same conductivity type as that of a source and a drain on opposite
sides of the body, and having an opposite conductivity type from the remainder of the body. The doped subsurface island(s) may be formed by a doping implant into a surface miconductor layer, for example through an open portion of a doping mask, the opening portion created for example by removal of a dummy gate. The doping of the islands may be performed so that the doping level of the island(s) is approximately the same as that of the body, thus enabling both Shockley-Read-Hall (SRH) and Auger recombination to take place.
申请人：ADVANCED MICRO DEVICES, INC.
家庭养殖
代理机构：Renner, Otto, Boislle & Sklar, LLP大白菜汤
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