Silvaco仿真学习基础结构：
平栅-LDMOS:【结构】
go atlas
# define mesh
mesh
x.m l=0.0 spac=0.3
x.m l=1.0 spac=0.018
x.m l=2.0 spac=0.018
x.m l=3.0 spac=0.3
y.m l=-0.02 spac=0.01
y.m l=0.0 spac=0.01
y.m l=0.3 spac=0.06
y.m l=1.0 spac=0.2
# define region
region num=1 y.min=0 silicon
region num=2 y.max=0 oxide
# define electrode
elect num=1 name=gate x.min=1.0 length=1 y.min=-0.02 y.max=-0.02
elect num=2 name=source left length=1 y.min=0.0 y.max=0.0
elect num=3 name=drain right length=1 y.min=0.0 y.max=0.0
elect num=4 name=substrate substrate
# define doping
doping pe conc=2e16
doping pe conc=1e17 char=0.1
doping pe conc=1e20 x.right=1.0 junc=0.2 ratio=0.6
doping pe conc=1e20 x.left=2.0 junc=0.2 ratio=0.6
#define str
save outfile=nmos.str
tonyplot nmos.str
#define model
models srh cvt print
#define gate charge
contact name=gate n.poly
interface qf=3e10
#calculate Vg-Id
method newton
solve init
solve vgate=-5
log outf=nmos1_1.log
solve vdrain=-5 vstep=0.25 vfinal=0 name=gate
save outf=nmos1_1.str
#calculate output lines
log off
solve vgate=-5 outf=solve_tmp1
solve vgate=0 outf=solve_tmp2
load infile=solve_tmp1
log outf=nmos1_2.log
solve name=drain vdrain=-5 vstep=0.5 vfinal=0
load infile=solve_tmp2
log outf=nmos1_3.log
solve name=drain vdrain=-5 vstep=0.5 vfinal=0
quit
平栅-LDMOS:【⼯艺】
# (c) Silvaco Inc., 2015
go athena
#
line x loc=0.0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.6 spac=0.01
#
line y loc=0.0 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
#
init orientation=100 c.phos=1e14 space.mul=2
#pwell formation including masking off of the nwell
晋江博物馆#
diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
#
etch oxide thick=0.02
#
#P-well Implant
#
implant boron do=8e12 energy=100 pears
#
diffus temp=950 time=100 weto2 hcl=3
#
#N-well implant not shown -
#
# welldrive starts here
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3 #
diffus time=220 temp=1200 nitro press=1
#
diffus time=90 temp=1200 t.rate=-4.444 nitro press=1
三案始末#
鱼香肉丝英文
etch oxide all
#
#sacrificial "cleaning" oxide
diffus time=20 temp=1000 dryo2 press=1 hcl=3
#
etch oxide all
#
#gate oxide grown here:-
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
#
# Extract a design parameter
extract name="gateox" thickness =1 x.val=0.05
#
#vt adjust implant
implant boron do=9.5e11 energy=10 pearson
#
depo poly thick=0.2 divi=10
#
#from now on the situation is 2-D
#
etch poly left p1.x=0.35
#
method fermi compress
method fermi compress
diffu time=3 temp=900 weto2 press=1.0
#
implant phosphor do=3.0e13 energy=20 pearson
#
depo oxide thick=0.120 divisions=8
下载列表
#
上海科技馆攻略
etch oxide dry thick=0.120
被窝里放屁歇后语#
implant arnic do=5.0e15 energy=50 pearson
#
method fermi compress
diffu time=1 temp=900 nitro press=1.0
#
# pattern s/d contact metal
etch oxide left p1.x=0.2
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18
# Extract design parameters
# extract final S/D Xj
extract name="nxj" xj =1 x.val=0.=1
# extract the N++ regions sheet resistance
extract name="n++ sheet rho" s material="Silicon" =1 x.val=0.=1
# extract the sheet rho under the spacer, of the LDD region
extract name="ldd sheet rho" s material="Silicon" \
<=1 x.val=0.=1
# extract the surface conc under the channel.
extract name="chan surf conc" impurity="Net Doping" \
material="Silicon" =1 x.val=0.45
# extract a curve of conductance versus bias.
extract start material="Polysilicon" =1 \
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name="sheet cond v bias" \
curve(duct material="Silicon" =1 =1)\
outfile="extract.dat"
# extract the long chan Vt
extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49
structure mirror right
electrode name=gate x=0.5 y=0.1
electrode name=source x=0.1
electrode name=drain x=1.1
electrode name=substrate backside
structure outfile=plain_nmos.str
# plot the structure
tonyplot plain_nmos.str
>>### Vt Test : Returns Vt, Beta and Theta >>>#go atlas
# t material models
models cvt srh print
contact name=gate n.poly
contact name=gate n.poly
interface qf=3e10
method newton
solve init
# Bias the drain
solve vdrain=0.1
# Ramp the gate宁夏高考分数线
log outf=plain_nmos.log master
solve vgate=0 vstep=0.25 vfinal=3.0 name=gate
save outf=plain_nmos_VgId.str
# plot results
生来平凡# extract device parameters
extract name="nvt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \ - abs(ave(v."drain"))/2.0)
extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain")))) \ * (1.0/abs(ave(v."drain")))
extract name="ntheta" ((max(abs(v."drain")) * $"nbeta")/max(abs(i."drain"))) \ - (1.0 / (max(abs(v."gat
e")) - ($"nvt")))
quit
